Abstract
Double-barrier resonant-tunneling (DBRT) devices belong to a novel class of nanometer scale electronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to intrinsic bistability and hysteresis. To analyze the dynamical stability of such devices, a simple set of equations is derived from an extension of the static theory. This extension results in a model for the dynamics which cannot be linearized around a point of operation. Numerically the stability of a DBRT-structure is investigated. This non-linearizable model is compared with an earlier, more simple, linearizable model.
Original language | English |
---|---|
Pages (from-to) | 53-56 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 12 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1992 |