Stability and formation kinetics of TiN and silicides in the Ti/Si3N4 diffusion couple

M. Paulasto, F.J.J. Loo, van, J. Kivilahti

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Abstract

Reactions in Ti/Si3N4 and TiN/Si diffusion couples annealed at 1000-1200 Deg were studied theor. and exptl. by using the SEM/EPMA technique. Isothermal sections of the Ti-Si-N system were calcd. by using the most recent thermodn. data. Calcns. showed that TiN and Si react with each other to form Si3N4 and TiSi2, parallel to the exptl. studies. Correspondingly, results from the Ti/Si3N4 couple were in agreement with calcd. phase equil. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)1069-1072
JournalJournal de Physique IV, Colloque
Volume3
Issue numberC7
DOIs
Publication statusPublished - 1993

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