Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films

K.B. Jinesh, W.F.A. Besling, E. Tois, J.H. Klootwijk, R.P.C. Wolters, W. Dekkers, M. Kaiser, F.E. Bakker, M. Tuominen, F. Roozeboom

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Abstract

During at. layer deposition of homogeneous LayZr1-yOx thin films spontaneous segregation of ZrO2 nanocrystals that are embedded in an amorphous La2O3 matrix takes place. This occurs if the Zr content in the LayZr1-yOx film rises >30%, i.e., if the pulse ratio between the La precursor and the Zr precursor is larger than four. X-ray diffraction anal. shows that the ZrO2 nanocrystals are in the tetragonal phase, which is the most stable configuration of this material with the highest dielec. permittivity. These nanocrystal-embedded thin films exhibit higher dielec. consts. as the Zr content increases. (c) 2008 American Institute of Physics. [on SciFinder (R)]
Original languageEnglish
Article number062903
Pages (from-to)062903-1/3
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number6
DOIs
Publication statusPublished - 2008

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