Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates

K.J. Friedland; R. Nötzel; H.-P. Schönherr; A. Riedel; H. Kostial; K. Ploog

doi:10.1016/S1386-9477(01)00134-5

Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates

K.J. Friedland
, R. Nötzel
, H.-P. Schönherr
, A. Riedel
, H. Kostial
, K. Ploog

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

16 Citations (Scopus)

Abstract

The spontaneous Hall effect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes along the [233] and [110] direction for the GaAs(3 1 1)A and GaAs(3 3 1)A substrates, respectively. A non-vanishing transverse magnetoresistance appears even for in-plane magnetic fields. We identify the origin of the non-vanishing transverse magnetoresistance as the spin–orbit interaction between conducting electrons and impurities. Different models, including out-of-plane magnetisation of the Fe-layers grown on high index GaAs substrates due to the stepped heterointerface and spin-orbit interaction governed by the magneto-crystalline anisotropy of bulk Fe or of the heterointerface, are discussed to explain the unusual ‘in-plane Hall effect’.

Original language	English
Pages (from-to)	442-446
Journal	Physica E: Low-Dimensional Systems & Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00134-5
Publication status	Published - 2001

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@article{946cc57b4b6747c39f1998c75e20d5c6,

title = "Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates",

abstract = "The spontaneous Hall effect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes along the [233] and [110] direction for the GaAs(3 1 1)A and GaAs(3 3 1)A substrates, respectively. A non-vanishing transverse magnetoresistance appears even for in-plane magnetic fields. We identify the origin of the non-vanishing transverse magnetoresistance as the spin–orbit interaction between conducting electrons and impurities. Different models, including out-of-plane magnetisation of the Fe-layers grown on high index GaAs substrates due to the stepped heterointerface and spin-orbit interaction governed by the magneto-crystalline anisotropy of bulk Fe or of the heterointerface, are discussed to explain the unusual {\textquoteleft}in-plane Hall effect{\textquoteright}.",

author = "K.J. Friedland and R. N{\"o}tzel and H.-P. Sch{\"o}nherr and A. Riedel and H. Kostial and K. Ploog",

year = "2001",

doi = "10.1016/S1386-9477(01)00134-5",

language = "English",

volume = "10",

pages = "442--446",

journal = "Physica E: Low-Dimensional Systems \& Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates

AU - Friedland, K.J.

AU - Nötzel, R.

AU - Schönherr, H.-P.

AU - Riedel, A.

AU - Kostial, H.

AU - Ploog, K.

PY - 2001

Y1 - 2001

N2 - The spontaneous Hall effect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes along the [233] and [110] direction for the GaAs(3 1 1)A and GaAs(3 3 1)A substrates, respectively. A non-vanishing transverse magnetoresistance appears even for in-plane magnetic fields. We identify the origin of the non-vanishing transverse magnetoresistance as the spin–orbit interaction between conducting electrons and impurities. Different models, including out-of-plane magnetisation of the Fe-layers grown on high index GaAs substrates due to the stepped heterointerface and spin-orbit interaction governed by the magneto-crystalline anisotropy of bulk Fe or of the heterointerface, are discussed to explain the unusual ‘in-plane Hall effect’.

AB - The spontaneous Hall effect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes along the [233] and [110] direction for the GaAs(3 1 1)A and GaAs(3 3 1)A substrates, respectively. A non-vanishing transverse magnetoresistance appears even for in-plane magnetic fields. We identify the origin of the non-vanishing transverse magnetoresistance as the spin–orbit interaction between conducting electrons and impurities. Different models, including out-of-plane magnetisation of the Fe-layers grown on high index GaAs substrates due to the stepped heterointerface and spin-orbit interaction governed by the magneto-crystalline anisotropy of bulk Fe or of the heterointerface, are discussed to explain the unusual ‘in-plane Hall effect’.

U2 - 10.1016/S1386-9477(01)00134-5

DO - 10.1016/S1386-9477(01)00134-5

M3 - Article

SN - 1386-9477

VL - 10

SP - 442

EP - 446

JO - Physica E: Low-Dimensional Systems & Nanostructures

JF - Physica E: Low-Dimensional Systems & Nanostructures

IS - 1-3

ER -

Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates

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