@inbook{f771220b98e14c5a9d0e560746db944f,
title = "Spontaneous emission from semiconductors after ultrafast pulse exitation: theory and simulation",
abstract = "In this chapter the use of picosecond/subpicosecond time-resolved/transient Raman spectroscopy to study electric-field-induced transient carrier transport and longitudinal optical phonons in semiconductor nanostructures is demonstrated. The important physics behind transient carrier transport in nanostructure semiconductors is revealed. Experimental results on electron-velocity overshoot in a GaAs-based p--i--n nanostructure are presented and discussed. In addition, electron ballistic transport in an InP-based p--i--n nanostructure and electron- as well as hole-velocity overshoots in an Al Ga As-based p--i--n nanostructure are demonstrated and discussed. Cerenkov generation of optical phonons by drifting electrons in GaAs-based p--i--n nanostructure is reported. Finally, some future challenging experiments related to these novel transient carrier transport phenomena are addressed.",
author = "K. Hannewald and S. Glutsch and F. Bechstedt",
year = "2004",
doi = "10.1007/978-3-540-44879-2\_4",
language = "English",
isbn = "978-3-540-40239-8",
series = "Topics in Applied Physics",
publisher = "Springer",
pages = "139--192",
editor = "K.-T. Tsen",
booktitle = "Ultrafast dynamical processes in semiconductors",
address = "Germany",
}