Split-channel ballistic transport in an InSb nanowire

Juan Carlos Estrada Saldaña, Yann Michel Niquet, Jean Pierre Cleuziou, Eduardo J.H. Lee, Diana Car, Sébastien R. Plissard, Erik P.A.M. Bakkers, Silvano De Franceschi

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)


We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. A total of three bottom gates are used to locally deplete the nanowire, creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D sub-bands is revealed by the emergence of conductance plateaus at multiples of e2/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear, leaving a first conductance step of 2e2/h, which is indicative of a remarkable 2-fold sub-band degeneracy that can persist up to several tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the sub-band structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.

Original languageEnglish
Pages (from-to)2282-2287
Number of pages6
JournalNano Letters
Issue number4
Publication statusPublished - 11 Apr 2018


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