Spin-injection device based on EuS magnetic tunnel barriers

A.T. Filip; P.R. LeClair; C.J.P. Smits; J.T. Kohlhepp; H.J.M. Swagten; B. Koopmans; W.J.M. Jonge, de

doi:10.1063/1.1503406

Spin-injection device based on EuS magnetic tunnel barriers

A.T. Filip, P.R. LeClair, C.J.P. Smits, J.T. Kohlhepp, H.J.M. Swagten, B. Koopmans, W.J.M. Jonge, de

Research output: Contribution to journal › Article › Academic › peer-review

52 Citations (Scopus)

210 Downloads (Pure)

Abstract

We propose a spin-valve device consisting of a nonmagnetic semiconductor quantum well, sandwiched between ferromagnetic semiconductor layers that act as barriers. The total conductance through such a trilayer depends on the relative magnetization of the two ferromagnetic-barrier layers which act as "spin filters." With respect to practical realization, EuS/PbS heterostructures may be a suitable candidate. The magnetoresistance should exceed 100% for a wide range of the thicknesses of both the quantum well and the ferromagnetic barriers. From a fundamental physics point of view, the device may not only give insight into the spin lifetimes of the nonmagnetic layer, but the strong spin accumulation taking place in the quantum well may lead to novel optical and nuclear magnetic resonance properties. ©2002 American Institute of Physics.

Original language	English
Pages (from-to)	1815-1817
Journal	Applied Physics Letters
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.1503406
Publication status	Published - 2002

Access to Document

10.1063/1.1503406

Metis192818Final published version, 104 KB

Cite this

@article{976a6a2dceb94b96a3d1988242d50f3d,

title = "Spin-injection device based on EuS magnetic tunnel barriers",

abstract = "We propose a spin-valve device consisting of a nonmagnetic semiconductor quantum well, sandwiched between ferromagnetic semiconductor layers that act as barriers. The total conductance through such a trilayer depends on the relative magnetization of the two ferromagnetic-barrier layers which act as {"}spin filters.{"} With respect to practical realization, EuS/PbS heterostructures may be a suitable candidate. The magnetoresistance should exceed 100% for a wide range of the thicknesses of both the quantum well and the ferromagnetic barriers. From a fundamental physics point of view, the device may not only give insight into the spin lifetimes of the nonmagnetic layer, but the strong spin accumulation taking place in the quantum well may lead to novel optical and nuclear magnetic resonance properties. {\textcopyright}2002 American Institute of Physics.",

author = "A.T. Filip and P.R. LeClair and C.J.P. Smits and J.T. Kohlhepp and H.J.M. Swagten and B. Koopmans and {Jonge, de}, W.J.M.",

year = "2002",

doi = "10.1063/1.1503406",

language = "English",

volume = "81",

pages = "1815--1817",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Spin-injection device based on EuS magnetic tunnel barriers

AU - Filip, A.T.

AU - LeClair, P.R.

AU - Smits, C.J.P.

AU - Kohlhepp, J.T.

AU - Swagten, H.J.M.

AU - Koopmans, B.

AU - Jonge, de, W.J.M.

PY - 2002

Y1 - 2002

N2 - We propose a spin-valve device consisting of a nonmagnetic semiconductor quantum well, sandwiched between ferromagnetic semiconductor layers that act as barriers. The total conductance through such a trilayer depends on the relative magnetization of the two ferromagnetic-barrier layers which act as "spin filters." With respect to practical realization, EuS/PbS heterostructures may be a suitable candidate. The magnetoresistance should exceed 100% for a wide range of the thicknesses of both the quantum well and the ferromagnetic barriers. From a fundamental physics point of view, the device may not only give insight into the spin lifetimes of the nonmagnetic layer, but the strong spin accumulation taking place in the quantum well may lead to novel optical and nuclear magnetic resonance properties. ©2002 American Institute of Physics.

AB - We propose a spin-valve device consisting of a nonmagnetic semiconductor quantum well, sandwiched between ferromagnetic semiconductor layers that act as barriers. The total conductance through such a trilayer depends on the relative magnetization of the two ferromagnetic-barrier layers which act as "spin filters." With respect to practical realization, EuS/PbS heterostructures may be a suitable candidate. The magnetoresistance should exceed 100% for a wide range of the thicknesses of both the quantum well and the ferromagnetic barriers. From a fundamental physics point of view, the device may not only give insight into the spin lifetimes of the nonmagnetic layer, but the strong spin accumulation taking place in the quantum well may lead to novel optical and nuclear magnetic resonance properties. ©2002 American Institute of Physics.

U2 - 10.1063/1.1503406

DO - 10.1063/1.1503406

M3 - Article

SN - 0003-6951

VL - 81

SP - 1815

EP - 1817

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Spin-injection device based on EuS magnetic tunnel barriers

Abstract

Access to Document

Fingerprint

Cite this