Spin-Hall assisted magnetic random access memory

A. Brink, van den, S. Cosemans, S. Cornelissen, M. Manfrini, A Vaysset, W. Roy, van, T. Min, H.J.M. Swagten, B. Koopmans

Research output: Contribution to journalArticleAcademicpeer-review

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We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1¿ns write time.
Original languageEnglish
Article number012403
Pages (from-to)012403-1/3
Number of pages3
JournalApplied Physics Letters
Publication statusPublished - 2014


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