Spin-dependent transmission at ferromagnet/semiconductor interfaces

M.W.J. Prins, D.L. Abraham, H. Kempen, van

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)


We have measured the polarization-dependent photoresponse of ferromagnet-insulator-(III–V) semiconductor thin film tunnel structures as a function of wavelength. When the structures have no interfacial barrier, we find that the response agrees well with calculations of magneto-optical transmission through the magnetic overlayer. However, when a tunnel barrier is present and the excitation is nearly resonant with the semiconductor bandgap, we observe significant deviations from the magneto-optical effects. These deviations are attributed to spin-dependent electron transmission from the III–V semiconductor acting as a spin-polarized source of tunneling electrons.
Original languageEnglish
Pages (from-to)152-155
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
Publication statusPublished - 1993


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