Abstract
We have measured the polarization-dependent photoresponse of ferromagnet-insulator-(III–V) semiconductor thin film tunnel structures as a function of wavelength. When the structures have no interfacial barrier, we find that the response agrees well with calculations of magneto-optical transmission through the magnetic overlayer. However, when a tunnel barrier is present and the excitation is nearly resonant with the semiconductor bandgap, we observe significant deviations from the magneto-optical effects. These deviations are attributed to spin-dependent electron transmission from the III–V semiconductor acting as a spin-polarized source of tunneling electrons.
Original language | English |
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Pages (from-to) | 152-155 |
Number of pages | 4 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 121 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1993 |