Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

X.Y. Chen; P. Koenraad; F.N. Hooge; J.H. Wolter

Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

X.Y. Chen
, P. Koenraad
, F.N. Hooge
, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).

Original language	English
Title of host publication	Noise in physical systems and 1/f fluctuations
Subtitle of host publication	proceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997
Editors	C. Claeys, E. Simoen
Place of Publication	Singapore
Publisher	World Scientific
Pages	457-460
Number of pages	4
ISBN (Print)	9810231415
Publication status	Published - 1 Dec 1997
Event	1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium Duration: 14 Jul 1997 → 18 Jul 1997

Conference

Conference	1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations
City	Leuven, Belgium
Period	14/07/97 → 18/07/97

Cite this

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title = "Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE",

abstract = "The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).",

author = "X.Y. Chen and P. Koenraad and F.N. Hooge and J.H. Wolter",

year = "1997",

month = dec,

day = "1",

language = "English",

isbn = "9810231415",

pages = "457--460",

editor = "C. Claeys and E. Simoen",

booktitle = "Noise in physical systems and 1/f fluctuations",

publisher = "World Scientific",

address = "United States",

note = "1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations ; Conference date: 14-07-1997 Through 18-07-1997",

}

Chen, XY, Koenraad, P, Hooge, FN & Wolter, JH 1997, Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE. in C Claeys & E Simoen (eds), Noise in physical systems and 1/f fluctuations: proceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997. World Scientific, Singapore, pp. 457-460, 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium, 14/07/97.

Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE. / Chen, X.Y.; Koenraad, P.; Hooge, F.N. et al.
Noise in physical systems and 1/f fluctuations: proceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997. ed. / C. Claeys; E. Simoen. Singapore: World Scientific, 1997. p. 457-460.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

AU - Chen, X.Y.

AU - Koenraad, P.

AU - Hooge, F.N.

AU - Wolter, J.H.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).

AB - The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).

UR - https://www.scopus.com/pages/publications/0031295469

M3 - Conference contribution

SN - 9810231415

SP - 457

EP - 460

BT - Noise in physical systems and 1/f fluctuations

A2 - Claeys, C.

A2 - Simoen, E.

PB - World Scientific

CY - Singapore

T2 - 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations

Y2 - 14 July 1997 through 18 July 1997

ER -

Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

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