Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

X.Y. Chen, P. Koenraad, F.N. Hooge, J.H. Wolter

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Abstract

The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).

Original languageEnglish
Title of host publicationNoise in physical systems and 1/f fluctuations
Subtitle of host publicationproceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997
EditorsC. Claeys, E. Simoen
Place of PublicationSingapore
PublisherWorld Scientific
Pages457-460
Number of pages4
ISBN (Print)9810231415
Publication statusPublished - 1 Dec 1997
Event1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium
Duration: 14 Jul 199718 Jul 1997

Conference

Conference1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations
CityLeuven, Belgium
Period14/07/9718/07/97

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