Abstract
The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).
Original language | English |
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Title of host publication | Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium |
Editors | C. Claeys, E. Simoen |
Pages | 457-460 |
Number of pages | 4 |
Publication status | Published - 1 Dec 1997 |
Event | 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium Duration: 14 Jul 1997 → 18 Jul 1997 |
Conference
Conference | 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations |
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City | Leuven, Belgium |
Period | 14/07/97 → 18/07/97 |