Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

M. Kemerink; J.W. Gerritsen; P.M. Koenraad; H. Kempen, van; J.H. Wolter

doi:10.1063/1.125419

Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

M. Kemerink, J.W. Gerritsen, P.M. Koenraad, H. Kempen, van, J.H. Wolter

Photonics and Semiconductor Nanophysics

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Abstract

Spectrally resolved scanning tunneling microscope-induced luminescence has been obtained under ambient conditions, i.e., at room temperature, in air, by passivating the sample surface with sulfur. This passivation turned out to be essential to suppress the local anodic oxidation induced by the tunneling current. From the dependence of the luminescence signal on tunneling current and voltage, we find that the passivation solution and post-passivation annealing temperature strongly modify the surface density of states (SDOS). More specifically, we found evidence that, after annealing at 400 °C, no SDOS is left above the bottom of the conduction band. For annealing at 200 °C, the SDOS is found to be extended up to 1.0±0.2 eV above the bottom of the conduction band. In all cases, the passivated (001) surface appears to be completely pinned.

Original language	English
Pages (from-to)	3656-3658
Journal	Applied Physics Letters
Volume	75
Issue number	23
DOIs	https://doi.org/10.1063/1.125419
Publication status	Published - 1999

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title = "Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope",

abstract = "Spectrally resolved scanning tunneling microscope-induced luminescence has been obtained under ambient conditions, i.e., at room temperature, in air, by passivating the sample surface with sulfur. This passivation turned out to be essential to suppress the local anodic oxidation induced by the tunneling current. From the dependence of the luminescence signal on tunneling current and voltage, we find that the passivation solution and post-passivation annealing temperature strongly modify the surface density of states (SDOS). More specifically, we found evidence that, after annealing at 400 °C, no SDOS is left above the bottom of the conduction band. For annealing at 200 °C, the SDOS is found to be extended up to 1.0±0.2 eV above the bottom of the conduction band. In all cases, the passivated (001) surface appears to be completely pinned.",

author = "M. Kemerink and J.W. Gerritsen and P.M. Koenraad and {Kempen, van}, H. and J.H. Wolter",

year = "1999",

doi = "10.1063/1.125419",

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volume = "75",

pages = "3656--3658",

journal = "Applied Physics Letters",

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T1 - Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

AU - Kemerink, M.

AU - Gerritsen, J.W.

AU - Koenraad, P.M.

AU - Kempen, van, H.

AU - Wolter, J.H.

PY - 1999

Y1 - 1999

N2 - Spectrally resolved scanning tunneling microscope-induced luminescence has been obtained under ambient conditions, i.e., at room temperature, in air, by passivating the sample surface with sulfur. This passivation turned out to be essential to suppress the local anodic oxidation induced by the tunneling current. From the dependence of the luminescence signal on tunneling current and voltage, we find that the passivation solution and post-passivation annealing temperature strongly modify the surface density of states (SDOS). More specifically, we found evidence that, after annealing at 400 °C, no SDOS is left above the bottom of the conduction band. For annealing at 200 °C, the SDOS is found to be extended up to 1.0±0.2 eV above the bottom of the conduction band. In all cases, the passivated (001) surface appears to be completely pinned.

AB - Spectrally resolved scanning tunneling microscope-induced luminescence has been obtained under ambient conditions, i.e., at room temperature, in air, by passivating the sample surface with sulfur. This passivation turned out to be essential to suppress the local anodic oxidation induced by the tunneling current. From the dependence of the luminescence signal on tunneling current and voltage, we find that the passivation solution and post-passivation annealing temperature strongly modify the surface density of states (SDOS). More specifically, we found evidence that, after annealing at 400 °C, no SDOS is left above the bottom of the conduction band. For annealing at 200 °C, the SDOS is found to be extended up to 1.0±0.2 eV above the bottom of the conduction band. In all cases, the passivated (001) surface appears to be completely pinned.

U2 - 10.1063/1.125419

DO - 10.1063/1.125419

M3 - Article

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VL - 75

SP - 3656

EP - 3658

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

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