Abstract
A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2O 3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a high-deposition-rate prototype ALD reactor based on the spatially-separated ALD principle has been developed, with Al 2O 3 deposition rates up to 1.2 nm/s. Later, the spatial ALD technique has been transferred to an actual in-line process development tool (PDT) for commercial high-throughput ALD of Al 2O 3, resulting in a deposition rate of 30 nm/min. The passivation quality and uniformity of the spatially-separated ALD Al 2O 3 films are evaluated on p- and n-type Si, applying quasi-steady-state photo-conductance, carrier density imaging and infrared lifetime mapping. In all cases, a spatial ALD Al 2O 3 layer of only 10 nm reached an excellent passivation quality and uniformity, comparable to reference wafers passivated by equivalent temporal plasma-assisted or thermal ALD Al 2O 3. Effective surface recombination velocities as low as 1.1 or 2.9 cm/s were obtained after annealing at 350°C or firing, respectively. Using spatial ALD Al 2O 3 passivated local Al back surface field p-type Si solar cells, the sufficient passivation of this high-throughput Al 2O 3 layer is evaluated: an average gain in open circuit voltage as compared to SiO x rear passivated i-PERC cells is obtained.
| Original language | English |
|---|---|
| Title of host publication | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 1144-1149 |
| Number of pages | 6 |
| ISBN (Print) | 9781424499656 |
| DOIs | |
| Publication status | Published - 1 Dec 2011 |
| Externally published | Yes |
| Event | 37th IEEE Photovoltaic Specialists Conference (PVSC 2011) - Seattle, United States Duration: 19 Jun 2011 → 24 Jun 2011 Conference number: 37 |
Conference
| Conference | 37th IEEE Photovoltaic Specialists Conference (PVSC 2011) |
|---|---|
| Abbreviated title | PVSC 2011 |
| Country | United States |
| City | Seattle |
| Period | 19/06/11 → 24/06/11 |
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Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation. / Vermang, B.; Werner, F.; Stals, W.; Lorenz, A.; Rothschild, A.; John, J.; Poortmans, J.; Mertens, R.; Gortzen, R.; Poodt, P.; Roozeboom, F.; Schmidt, J.
37th IEEE Photovoltaic Specialists Conference, PVSC 2011. Piscataway : Institute of Electrical and Electronics Engineers, 2011. p. 1144-1149 6186155.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation
AU - Vermang, B.
AU - Werner, F.
AU - Stals, W.
AU - Lorenz, A.
AU - Rothschild, A.
AU - John, J.
AU - Poortmans, J.
AU - Mertens, R.
AU - Gortzen, R.
AU - Poodt, P.
AU - Roozeboom, F.
AU - Schmidt, J.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2O 3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a high-deposition-rate prototype ALD reactor based on the spatially-separated ALD principle has been developed, with Al 2O 3 deposition rates up to 1.2 nm/s. Later, the spatial ALD technique has been transferred to an actual in-line process development tool (PDT) for commercial high-throughput ALD of Al 2O 3, resulting in a deposition rate of 30 nm/min. The passivation quality and uniformity of the spatially-separated ALD Al 2O 3 films are evaluated on p- and n-type Si, applying quasi-steady-state photo-conductance, carrier density imaging and infrared lifetime mapping. In all cases, a spatial ALD Al 2O 3 layer of only 10 nm reached an excellent passivation quality and uniformity, comparable to reference wafers passivated by equivalent temporal plasma-assisted or thermal ALD Al 2O 3. Effective surface recombination velocities as low as 1.1 or 2.9 cm/s were obtained after annealing at 350°C or firing, respectively. Using spatial ALD Al 2O 3 passivated local Al back surface field p-type Si solar cells, the sufficient passivation of this high-throughput Al 2O 3 layer is evaluated: an average gain in open circuit voltage as compared to SiO x rear passivated i-PERC cells is obtained.
AB - A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2O 3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a high-deposition-rate prototype ALD reactor based on the spatially-separated ALD principle has been developed, with Al 2O 3 deposition rates up to 1.2 nm/s. Later, the spatial ALD technique has been transferred to an actual in-line process development tool (PDT) for commercial high-throughput ALD of Al 2O 3, resulting in a deposition rate of 30 nm/min. The passivation quality and uniformity of the spatially-separated ALD Al 2O 3 films are evaluated on p- and n-type Si, applying quasi-steady-state photo-conductance, carrier density imaging and infrared lifetime mapping. In all cases, a spatial ALD Al 2O 3 layer of only 10 nm reached an excellent passivation quality and uniformity, comparable to reference wafers passivated by equivalent temporal plasma-assisted or thermal ALD Al 2O 3. Effective surface recombination velocities as low as 1.1 or 2.9 cm/s were obtained after annealing at 350°C or firing, respectively. Using spatial ALD Al 2O 3 passivated local Al back surface field p-type Si solar cells, the sufficient passivation of this high-throughput Al 2O 3 layer is evaluated: an average gain in open circuit voltage as compared to SiO x rear passivated i-PERC cells is obtained.
UR - http://www.scopus.com/inward/record.url?scp=84861079750&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186155
DO - 10.1109/PVSC.2011.6186155
M3 - Conference contribution
AN - SCOPUS:84861079750
SN - 9781424499656
SP - 1144
EP - 1149
BT - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
PB - Institute of Electrical and Electronics Engineers
CY - Piscataway
ER -