Spatial correlation effects of charged impurities on electron mobility in delta doped quantum barriers

P.M. Koenraad, J.M. Shi, A.F.W. Stadt, van de, F.M. Peeters, J.T. Devreese, J.H. Wolter

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
2 Downloads (Pure)

Abstract

The quantum mobility has been measured in d-doped GaAs/AlxGa1-xAs/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlation effects in the mobility calculations.
Original languageEnglish
Pages (from-to)237-240
JournalSuperlattices and Microstructures
Volume21
Issue number2
DOIs
Publication statusPublished - 1997

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