Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors

A. Illiberi; B. Cobb; A. Sharma; T. Grehl; H.H. Brongersma; F. Roozeboom; G.H. Gelinck; P. Poodt

doi:10.1021/am508071y

Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors

A. Illiberi, B. Cobb, A. Sharma, T. Grehl, H.H. Brongersma, F. Roozeboom, G.H. Gelinck, P. Poodt

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Abstract

We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.

Original language	English
Pages (from-to)	3671-3675
Journal	ACS Applied Materials & Interfaces
Volume	7
Issue number	6
DOIs	https://doi.org/10.1021/am508071y
Publication status	Published - 2015

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@article{f01ce3b0b3f4445e92418b318d0d3927,

title = "Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors",

abstract = "We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.",

author = "A. Illiberi and B. Cobb and A. Sharma and T. Grehl and H.H. Brongersma and F. Roozeboom and G.H. Gelinck and P. Poodt",

year = "2015",

doi = "10.1021/am508071y",

language = "English",

volume = "7",

pages = "3671--3675",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors

AU - Illiberi, A.

AU - Cobb, B.

AU - Sharma, A.

AU - Grehl, T.

AU - Brongersma, H.H.

AU - Roozeboom, F.

AU - Gelinck, G.H.

AU - Poodt, P.

PY - 2015

Y1 - 2015

N2 - We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.

AB - We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.

U2 - 10.1021/am508071y

DO - 10.1021/am508071y

M3 - Article

C2 - 25607589

SN - 1944-8244

VL - 7

SP - 3671

EP - 3675

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 6

ER -

Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors

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