Spatial atmospheric atomic layer deposition of AlxZn1-xO

A. Illiberi, R. Scherpenborg, Y. Wu, F. Roozeboom, P. Poodt

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The possibility of growing multicomponent oxides by spatial atmospheric atomic layer deposition has been investigated. To this end, AlxZn1-xO films have been deposited using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as Zn, Al, and O precursors, respectively. When the metal precursors (i.e., TMA and DEZ) are coinjected in the deposition region, the Al/(Al + Zn) ratio can be accurately controlled by either varying the TMA flow to the reactor or the exposure time of the substrate to the precursors. A high doping efficiency level (up to 70%) is achieved in Al-doped ZnO, resulting in films with a high carrier density (5 X 10(20) cm(-3)), low resistivity (2 X 10(-3) Omega cm), and good optical transparency (>85%) in the visible range. The morphology of the films changes from polycrystalline, in conductive i-ZnO and Al-doped ZnO, to amorphous, in highly resistive Al-rich films. The unique combination of the fine tuning of the composition, morphology, and electrical properties of the films with high deposition rates (>0.2 nm/s) paves the way for spatial ALD as an emerging disruptive technique for the growth of multicomponent oxides over large areas.
Original languageEnglish
Pages (from-to)13124-13128
Number of pages5
JournalACS Applied Materials & Interfaces
Issue number24
Publication statusPublished - 2013


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