TY - GEN
T1 - Spatial atmospheric ALD of functional layers for CIGS Solar Cells
AU - Illiberi, A.
AU - Frijters, C.
AU - Balder, J. E.
AU - Poodt, P.
AU - Roozeboom, F.
PY - 2015
Y1 - 2015
N2 - Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.
AB - Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.
UR - http://www.scopus.com/inward/record.url?scp=84945907821&partnerID=8YFLogxK
U2 - 10.1149/06907.0031ecst
DO - 10.1149/06907.0031ecst
M3 - Conference contribution
VL - 69
T3 - ECS Transactions
SP - 31
EP - 37
BT - Atomic Layer Deposition Applications 11
PB - Electrochemical Society, Inc.
T2 - Symposium on Atomic Layer Deposition Applications 11
Y2 - 13 October 2015 through 15 October 2015
ER -