Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

L. Yu; X. Li; J. Smith; S. Tierney; R. Sweeney; B.K.C. Kjellander; G.H. Gelinck; T.D. Anthopoulos; N. Stingelin

doi:10.1039/c2jm30893b

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

L. Yu, X. Li, J. Smith, S. Tierney, R. Sweeney, B.K.C. Kjellander, G.H. Gelinck, T.D. Anthopoulos, N. Stingelin

Research output: Contribution to journal › Article › Academic › peer-review

21 Citations (Scopus)

237 Downloads (Pure)

Abstract

We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm2 V-1 s-1 depending on crystal orientation by careful selection of casting conditions

Original language	English
Pages (from-to)	9458-9461
Journal	Journal of Materials Chemistry
Volume	22
Issue number	19
DOIs	https://doi.org/10.1039/c2jm30893b
Publication status	Published - 2012

Access to Document

10.1039/c2jm30893b

publishers versionFinal published version, 661 KB

Cite this

@article{a1339be031af450cb933b22736f6347c,

title = "Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy",

abstract = "We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm2 V-1 s-1 depending on crystal orientation by careful selection of casting conditions",

author = "L. Yu and X. Li and J. Smith and S. Tierney and R. Sweeney and B.K.C. Kjellander and G.H. Gelinck and T.D. Anthopoulos and N. Stingelin",

year = "2012",

doi = "10.1039/c2jm30893b",

language = "English",

volume = "22",

pages = "9458--9461",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "19",

}

TY - JOUR

T1 - Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

AU - Yu, L.

AU - Li, X.

AU - Smith, J.

AU - Tierney, S.

AU - Sweeney, R.

AU - Kjellander, B.K.C.

AU - Gelinck, G.H.

AU - Anthopoulos, T.D.

AU - Stingelin, N.

PY - 2012

Y1 - 2012

N2 - We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm2 V-1 s-1 depending on crystal orientation by careful selection of casting conditions

AB - We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm2 V-1 s-1 depending on crystal orientation by careful selection of casting conditions

U2 - 10.1039/c2jm30893b

DO - 10.1039/c2jm30893b

M3 - Article

SN - 0959-9428

VL - 22

SP - 9458

EP - 9461

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 19

ER -

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

Abstract

Access to Document

Fingerprint

Cite this