The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.
|Title of host publication||Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)|
|Editors||R. Metselaar, H.J.M. Heijligers, J. Schoonman|
|Place of Publication||Amsterdam|
|Publisher||Elsevier Scientific Publishing Company|
|Publication status||Published - 1983|
|Name||Studies in Inorganic Chemistry|
Beers, A. M., Hintzen, H. T. J. M., & Bloem, J. (1983). Solid state transitions during the growth of silicon by chemical vapour deposition. In R. Metselaar, H. J. M. Heijligers, & J. Schoonman (Eds.), Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands) (pp. 177-180). (Studies in Inorganic Chemistry; Vol. 3). Amsterdam: Elsevier Scientific Publishing Company. https://doi.org/10.1021/ic50012a005