Solid state transitions during the growth of silicon by chemical vapour deposition

A.M. Beers, H.T.J.M. Hintzen, J. Bloem

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
25 Downloads (Pure)

Abstract

The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.
Original languageEnglish
Title of host publicationProceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)
EditorsR. Metselaar, H.J.M. Heijligers, J. Schoonman
Place of PublicationAmsterdam
PublisherElsevier Scientific Publishing Company
Pages177-180
ISBN (Print)0-444-42147-5
DOIs
Publication statusPublished - 1983

Publication series

NameStudies in Inorganic Chemistry
Volume3
ISSN (Print)0169-3158

Fingerprint

vapor deposition
solid state
silicon
emissivity
optical measurement
optical thickness
atmospheric pressure
hydrogen

Cite this

Beers, A. M., Hintzen, H. T. J. M., & Bloem, J. (1983). Solid state transitions during the growth of silicon by chemical vapour deposition. In R. Metselaar, H. J. M. Heijligers, & J. Schoonman (Eds.), Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands) (pp. 177-180). (Studies in Inorganic Chemistry; Vol. 3). Amsterdam: Elsevier Scientific Publishing Company. https://doi.org/10.1021/ic50012a005
Beers, A.M. ; Hintzen, H.T.J.M. ; Bloem, J. / Solid state transitions during the growth of silicon by chemical vapour deposition. Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). editor / R. Metselaar ; H.J.M. Heijligers ; J. Schoonman. Amsterdam : Elsevier Scientific Publishing Company, 1983. pp. 177-180 (Studies in Inorganic Chemistry).
@inproceedings{e7f4749974ee4f84810759cc44bd32d8,
title = "Solid state transitions during the growth of silicon by chemical vapour deposition",
abstract = "The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol{\%} SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.",
author = "A.M. Beers and H.T.J.M. Hintzen and J. Bloem",
year = "1983",
doi = "10.1021/ic50012a005",
language = "English",
isbn = "0-444-42147-5",
series = "Studies in Inorganic Chemistry",
publisher = "Elsevier Scientific Publishing Company",
pages = "177--180",
editor = "R. Metselaar and H.J.M. Heijligers and J. Schoonman",
booktitle = "Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)",

}

Beers, AM, Hintzen, HTJM & Bloem, J 1983, Solid state transitions during the growth of silicon by chemical vapour deposition. in R Metselaar, HJM Heijligers & J Schoonman (eds), Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). Studies in Inorganic Chemistry, vol. 3, Elsevier Scientific Publishing Company, Amsterdam, pp. 177-180. https://doi.org/10.1021/ic50012a005

Solid state transitions during the growth of silicon by chemical vapour deposition. / Beers, A.M.; Hintzen, H.T.J.M.; Bloem, J.

Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). ed. / R. Metselaar; H.J.M. Heijligers; J. Schoonman. Amsterdam : Elsevier Scientific Publishing Company, 1983. p. 177-180 (Studies in Inorganic Chemistry; Vol. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Solid state transitions during the growth of silicon by chemical vapour deposition

AU - Beers, A.M.

AU - Hintzen, H.T.J.M.

AU - Bloem, J.

PY - 1983

Y1 - 1983

N2 - The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.

AB - The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.

U2 - 10.1021/ic50012a005

DO - 10.1021/ic50012a005

M3 - Conference contribution

SN - 0-444-42147-5

T3 - Studies in Inorganic Chemistry

SP - 177

EP - 180

BT - Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)

A2 - Metselaar, R.

A2 - Heijligers, H.J.M.

A2 - Schoonman, J.

PB - Elsevier Scientific Publishing Company

CY - Amsterdam

ER -

Beers AM, Hintzen HTJM, Bloem J. Solid state transitions during the growth of silicon by chemical vapour deposition. In Metselaar R, Heijligers HJM, Schoonman J, editors, Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). Amsterdam: Elsevier Scientific Publishing Company. 1983. p. 177-180. (Studies in Inorganic Chemistry). https://doi.org/10.1021/ic50012a005