The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions
a-Si:H + a-Si + c-Si.
|Title of host publication||Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)|
|Editors||R. Metselaar, H.J.M. Heijligers, J. Schoonman|
|Place of Publication||Amsterdam|
|Publisher||Elsevier Scientific Publishing Company|
|Publication status||Published - 1983|
|Name||Studies in Inorganic Chemistry|