Solid state transitions during the growth of silicon by chemical vapour deposition

A.M. Beers, H.T.J.M. Hintzen, J. Bloem

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Abstract

The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.
Original languageEnglish
Title of host publicationProceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)
EditorsR. Metselaar, H.J.M. Heijligers, J. Schoonman
Place of PublicationAmsterdam
PublisherElsevier Scientific Publishing Company
Pages177-180
ISBN (Print)0-444-42147-5
DOIs
Publication statusPublished - 1983

Publication series

NameStudies in Inorganic Chemistry
Volume3
ISSN (Print)0169-3158

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Beers, A. M., Hintzen, H. T. J. M., & Bloem, J. (1983). Solid state transitions during the growth of silicon by chemical vapour deposition. In R. Metselaar, H. J. M. Heijligers, & J. Schoonman (Eds.), Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands) (pp. 177-180). (Studies in Inorganic Chemistry; Vol. 3). Amsterdam: Elsevier Scientific Publishing Company. https://doi.org/10.1021/ic50012a005