Solid state transitions during the growth of silicon by chemical vapour deposition

A.M. Beers; H.T.J.M. Hintzen; J. Bloem

doi:10.1021/ic50012a005

Solid state transitions during the growth of silicon by chemical vapour deposition

A.M. Beers, H.T.J.M. Hintzen, J. Bloem

Inorganic Materials & Catalysis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.

Original language	English
Title of host publication	Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)
Editors	R. Metselaar, H.J.M. Heijligers, J. Schoonman
Place of Publication	Amsterdam
Publisher	Elsevier Scientific Publishing Company
Pages	177-180
ISBN (Print)	0-444-42147-5
DOIs	https://doi.org/10.1021/ic50012a005
Publication status	Published - 1983

Publication series

Name	Studies in Inorganic Chemistry
Volume	3
ISSN (Print)	0169-3158

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10.1021/ic50012a005

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Beers, A. M., Hintzen, H. T. J. M., & Bloem, J. (1983). Solid state transitions during the growth of silicon by chemical vapour deposition. In R. Metselaar, H. J. M. Heijligers, & J. Schoonman (Eds.), Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands) (pp. 177-180). (Studies in Inorganic Chemistry; Vol. 3). Elsevier Scientific Publishing Company. https://doi.org/10.1021/ic50012a005

Beers, A.M. ; Hintzen, H.T.J.M. ; Bloem, J. / Solid state transitions during the growth of silicon by chemical vapour deposition. Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). editor / R. Metselaar ; H.J.M. Heijligers ; J. Schoonman. Amsterdam : Elsevier Scientific Publishing Company, 1983. pp. 177-180 (Studies in Inorganic Chemistry).

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abstract = "The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.",

author = "A.M. Beers and H.T.J.M. Hintzen and J. Bloem",

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Beers, AM, Hintzen, HTJM & Bloem, J 1983, Solid state transitions during the growth of silicon by chemical vapour deposition. in R Metselaar, HJM Heijligers & J Schoonman (eds), Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). Studies in Inorganic Chemistry, vol. 3, Elsevier Scientific Publishing Company, Amsterdam, pp. 177-180. https://doi.org/10.1021/ic50012a005

Solid state transitions during the growth of silicon by chemical vapour deposition. / Beers, A.M.; Hintzen, H.T.J.M.; Bloem, J.
Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). ed. / R. Metselaar; H.J.M. Heijligers; J. Schoonman. Amsterdam: Elsevier Scientific Publishing Company, 1983. p. 177-180 (Studies in Inorganic Chemistry; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Bloem, J.

PY - 1983

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N2 - The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.

AB - The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.

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DO - 10.1021/ic50012a005

M3 - Conference contribution

SN - 0-444-42147-5

T3 - Studies in Inorganic Chemistry

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BT - Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)

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Beers AM, Hintzen HTJM, Bloem J. Solid state transitions during the growth of silicon by chemical vapour deposition. In Metselaar R, Heijligers HJM, Schoonman J, editors, Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands). Amsterdam: Elsevier Scientific Publishing Company. 1983. p. 177-180. (Studies in Inorganic Chemistry). doi: 10.1021/ic50012a005

Solid state transitions during the growth of silicon by chemical vapour deposition

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