Abstract
In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60¿nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (~1.5¿µm) polycrystalline silicon was obtained after SPC of high growth rate (~25¿nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.
Original language | English |
---|---|
Article number | 103510 |
Pages (from-to) | 103510-1/5 |
Journal | Journal of Applied Physics |
Volume | 111 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2012 |