Solid-phase crystallization of ultra high growth rate amorphous silicon films

K. Sharma; M. Ponomarev; M.A. Verheijen; O. Kunz; M.C.M. Sanden, van de; M. Creatore

doi:10.1063/1.4717951

Solid-phase crystallization of ultra high growth rate amorphous silicon films

K. Sharma, M. Ponomarev, M.A. Verheijen, O. Kunz, M.C.M. Sanden, van de, M. Creatore

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Abstract

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60¿nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (~1.5¿µm) polycrystalline silicon was obtained after SPC of high growth rate (~25¿nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.

Original language	English
Article number	103510
Pages (from-to)	103510-1/5
Journal	Journal of Applied Physics
Volume	111
Issue number	10
DOIs	https://doi.org/10.1063/1.4717951
Publication status	Published - 2012

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@article{f8a4c2691e1b46d4b61d5f7cb00b6cf4,

title = "Solid-phase crystallization of ultra high growth rate amorphous silicon films",

abstract = "In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60¿nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (~1.5¿µm) polycrystalline silicon was obtained after SPC of high growth rate (~25¿nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.",

author = "K. Sharma and M. Ponomarev and M.A. Verheijen and O. Kunz and {Sanden, van de}, M.C.M. and M. Creatore",

year = "2012",

doi = "10.1063/1.4717951",

language = "English",

volume = "111",

pages = "103510--1/5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Solid-phase crystallization of ultra high growth rate amorphous silicon films

AU - Sharma, K.

AU - Ponomarev, M.

AU - Verheijen, M.A.

AU - Kunz, O.

AU - Sanden, van de, M.C.M.

AU - Creatore, M.

PY - 2012

Y1 - 2012

N2 - In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60¿nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (~1.5¿µm) polycrystalline silicon was obtained after SPC of high growth rate (~25¿nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.

AB - In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60¿nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (~1.5¿µm) polycrystalline silicon was obtained after SPC of high growth rate (~25¿nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.

U2 - 10.1063/1.4717951

DO - 10.1063/1.4717951

M3 - Article

VL - 111

SP - 103510-1/5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 103510

ER -

Solid-phase crystallization of ultra high growth rate amorphous silicon films

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