Solid-phase crystallization of ultra high growth rate amorphous silicon films

K. Sharma, M. Ponomarev, M.A. Verheijen, O. Kunz, M.C.M. Sanden, van de, M. Creatore

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Abstract

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60¿nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (~1.5¿µm) polycrystalline silicon was obtained after SPC of high growth rate (~25¿nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.
Original languageEnglish
Article number103510
Pages (from-to)103510-1/5
JournalJournal of Applied Physics
Volume111
Issue number10
DOIs
Publication statusPublished - 2012

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