Abstract
Using an expanding thermal plasma, hydrogenated amorphous silicon films with good optoelectronic properties have been grown at high rates. The purpose of this work is to discuss the first implementations of the material grown at higher growth rates into p-i-n deposited solar cells. The set-up, that has been built to realize this, contains a radio-frequency plasma-enhanced chem. vapor deposition part for the doped n- and p-layers and a cascaded arc expanding thermal plasma to deposit the intrinsic layer at high deposition rates. The n- and p-layers turned out to be very good, however some problems are still obsd. for intrinsic layers obtained at temps. of .apprx.200 Deg. A solar cell with an initial efficiency of 5.3% of which the i-layer has been grown at 8.5 .ANG./s is demonstrated. [on SciFinder (R)]
Original language | English |
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Title of host publication | Sixteenth European Photovoltaic Solar Energy Conference : proceedings of the international conference held in Glasgow, United Kingdom, 1 - 5 May 2000 |
Editors | H. Scheer |
Place of Publication | London |
Publisher | James & James |
Pages | 490-493 |
ISBN (Print) | 1-902916-18-2 |
Publication status | Published - 2000 |
Event | conference; EPV Conference and Exhibition : European Photovoltaic Solar Energy Conference ; 16 (Glasgow) : 2000.05.01-05 - Duration: 1 Jan 2000 → … |
Conference
Conference | conference; EPV Conference and Exhibition : European Photovoltaic Solar Energy Conference ; 16 (Glasgow) : 2000.05.01-05 |
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Period | 1/01/00 → … |
Other | EPV Conference and Exhibition : European Photovoltaic Solar Energy Conference ; 16 (Glasgow) : 2000.05.01-05 |