Solar cells with intrinsic a-Si:H deposited at rates larger than 5Å/s by the expanding thermal plasma

B.A. Korevaar, C. Smit, R.A.C.M.M. Swaaij, van, A.H.M. Smets, W.M.M. Kessels, J.W. Metselaar, D.C. Schram, M.C.M. Sanden, van de

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Abstract

Using an expanding thermal plasma, hydrogenated amorphous silicon films with good optoelectronic properties have been grown at high rates. The purpose of this work is to discuss the first implementations of the material grown at higher growth rates into p-i-n deposited solar cells. The set-up, that has been built to realize this, contains a radio-frequency plasma-enhanced chem. vapor deposition part for the doped n- and p-layers and a cascaded arc expanding thermal plasma to deposit the intrinsic layer at high deposition rates. The n- and p-layers turned out to be very good, however some problems are still obsd. for intrinsic layers obtained at temps. of .apprx.200 Deg. A solar cell with an initial efficiency of 5.3% of which the i-layer has been grown at 8.5 .ANG./s is demonstrated. [on SciFinder (R)]
Original languageEnglish
Title of host publicationSixteenth European Photovoltaic Solar Energy Conference : proceedings of the international conference held in Glasgow, United Kingdom, 1 - 5 May 2000
EditorsH. Scheer
Place of PublicationLondon
PublisherJames & James
Pages490-493
ISBN (Print)1-902916-18-2
Publication statusPublished - 2000
Eventconference; EPV Conference and Exhibition : European Photovoltaic Solar Energy Conference ; 16 (Glasgow) : 2000.05.01-05 -
Duration: 1 Jan 2000 → …

Conference

Conferenceconference; EPV Conference and Exhibition : European Photovoltaic Solar Energy Conference ; 16 (Glasgow) : 2000.05.01-05
Period1/01/00 → …
OtherEPV Conference and Exhibition : European Photovoltaic Solar Energy Conference ; 16 (Glasgow) : 2000.05.01-05

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