Soft magnetic properties of Fe/FeN multilayer films prepared by reactive diode rf sputtering

F. Pierre; P. Boher; Ph Houdy; F. W.A. Dirne; H. J. de Wit

doi:10.1016/0304-8853(91)90317-4

Soft magnetic properties of Fe/FeN multilayer films prepared by reactive diode rf sputtering

F. Pierre, P. Boher, Ph Houdy, F. W.A. Dirne, H. J. de Wit

NanoLab@TU/e

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

Fe/FeN multilayer films with Fe and FeN layer thicknesses in the range of respectively 80-110 and 30-80 Å have been prepared using a reactive diode rf sputtering system. Their crystallographic characteristics and magnetic properties have been investigated to determine the deposition conditions leading to good soft magnetic properties. Results show that the application of a static magnetic field during the deposition improves the soft magnetic propertoes of the films, by varying the mean iron grain orientation. Coercivity smaller than 40 A/m, saturation magnetization up to 1.9 T and permeability up to 1600 were obtained for a nitrogen partial pressure equal to 2 mTorr and the FeN layer thickness less than 50 Å.

Original language	English
Pages (from-to)	131-135
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	93
Issue number	C
DOIs	https://doi.org/10.1016/0304-8853(91)90317-4
Publication status	Published - Feb 1991

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title = "Soft magnetic properties of Fe/FeN multilayer films prepared by reactive diode rf sputtering",

abstract = "Fe/FeN multilayer films with Fe and FeN layer thicknesses in the range of respectively 80-110 and 30-80 {\AA} have been prepared using a reactive diode rf sputtering system. Their crystallographic characteristics and magnetic properties have been investigated to determine the deposition conditions leading to good soft magnetic properties. Results show that the application of a static magnetic field during the deposition improves the soft magnetic propertoes of the films, by varying the mean iron grain orientation. Coercivity smaller than 40 A/m, saturation magnetization up to 1.9 T and permeability up to 1600 were obtained for a nitrogen partial pressure equal to 2 mTorr and the FeN layer thickness less than 50 {\AA}.",

author = "F. Pierre and P. Boher and Ph Houdy and Dirne, {F. W.A.} and {de Wit}, {H. J.}",

year = "1991",

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doi = "10.1016/0304-8853(91)90317-4",

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T1 - Soft magnetic properties of Fe/FeN multilayer films prepared by reactive diode rf sputtering

AU - Pierre, F.

AU - Boher, P.

AU - Houdy, Ph

AU - Dirne, F. W.A.

AU - de Wit, H. J.

PY - 1991/2

Y1 - 1991/2

N2 - Fe/FeN multilayer films with Fe and FeN layer thicknesses in the range of respectively 80-110 and 30-80 Å have been prepared using a reactive diode rf sputtering system. Their crystallographic characteristics and magnetic properties have been investigated to determine the deposition conditions leading to good soft magnetic properties. Results show that the application of a static magnetic field during the deposition improves the soft magnetic propertoes of the films, by varying the mean iron grain orientation. Coercivity smaller than 40 A/m, saturation magnetization up to 1.9 T and permeability up to 1600 were obtained for a nitrogen partial pressure equal to 2 mTorr and the FeN layer thickness less than 50 Å.

AB - Fe/FeN multilayer films with Fe and FeN layer thicknesses in the range of respectively 80-110 and 30-80 Å have been prepared using a reactive diode rf sputtering system. Their crystallographic characteristics and magnetic properties have been investigated to determine the deposition conditions leading to good soft magnetic properties. Results show that the application of a static magnetic field during the deposition improves the soft magnetic propertoes of the films, by varying the mean iron grain orientation. Coercivity smaller than 40 A/m, saturation magnetization up to 1.9 T and permeability up to 1600 were obtained for a nitrogen partial pressure equal to 2 mTorr and the FeN layer thickness less than 50 Å.

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