Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration

S. Latkowski; P.J.A. Thijs; P.J. Veldhoven, van; H. Rabbani Haghighi; M.K. Smit; E.A.J.M. Bente

doi:10.1109/IPCon.2013.6656534

Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration

S. Latkowski, P.J.A. Thijs, P.J. Veldhoven, van, H. Rabbani Haghighi, M.K. Smit, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

6 Downloads (Pure)

Abstract

Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07µm and 3dB bandwidth up to 27nm.

Original language	English
Title of host publication	Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	258-259
ISBN (Print)	978-1-4577-1507-5
DOIs	https://doi.org/10.1109/IPCon.2013.6656534
Publication status	Published - 2013
Event	26th IEEE Photonics Conference, IPC 2013 - Bellevue, United States Duration: 8 Sept 2013 → 12 Sept 2013 Conference number: 26

Conference

Conference	26th IEEE Photonics Conference, IPC 2013
Abbreviated title	IPC 2013
Country/Territory	United States
City	Bellevue
Period	8/09/13 → 12/09/13

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10.1109/IPCon.2013.6656534

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Latkowski, S., Thijs, P. J. A., Veldhoven, van, P. J., Rabbani Haghighi, H., Smit, M. K., & Bente, E. A. J. M. (2013). Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration. In Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA (pp. 258-259). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IPCon.2013.6656534

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title = "Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration",

abstract = "Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07µm and 3dB bandwidth up to 27nm.",

author = "S. Latkowski and P.J.A. Thijs and \{Veldhoven, van\}, P.J. and \{Rabbani Haghighi\}, H. and M.K. Smit and E.A.J.M. Bente",

year = "2013",

doi = "10.1109/IPCon.2013.6656534",

language = "English",

isbn = "978-1-4577-1507-5",

pages = "258--259",

booktitle = "Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "26th IEEE Photonics Conference, IPC 2013, IPC 2013 ; Conference date: 08-09-2013 Through 12-09-2013",

}

Latkowski, S, Thijs, PJA, Veldhoven, van, PJ, Rabbani Haghighi, H, Smit, MK & Bente, EAJM 2013, Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration. in Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 258-259, 26th IEEE Photonics Conference, IPC 2013, Bellevue, Washington, United States, 8/09/13. https://doi.org/10.1109/IPCon.2013.6656534

Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration. / Latkowski, S.; Thijs, P.J.A.; Veldhoven, van, P.J. et al.
Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA. Piscataway: Institute of Electrical and Electronics Engineers, 2013. p. 258-259.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration

AU - Latkowski, S.

AU - Thijs, P.J.A.

AU - Veldhoven, van, P.J.

AU - Rabbani Haghighi, H.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

N1 - Conference code: 26

PY - 2013

Y1 - 2013

N2 - Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07µm and 3dB bandwidth up to 27nm.

AB - Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07µm and 3dB bandwidth up to 27nm.

U2 - 10.1109/IPCon.2013.6656534

DO - 10.1109/IPCon.2013.6656534

M3 - Conference contribution

SN - 978-1-4577-1507-5

SP - 258

EP - 259

BT - Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 26th IEEE Photonics Conference, IPC 2013

Y2 - 8 September 2013 through 12 September 2013

ER -

Latkowski S, Thijs PJA, Veldhoven, van PJ, Rabbani Haghighi H, Smit MK , Bente EAJM. Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration. In Photonics Conference (IPC) IEEE, 2013,8-12 Sept. 2013, Bellevue, WA, USA. Piscataway: Institute of Electrical and Electronics Engineers. 2013. p. 258-259 doi: 10.1109/IPCon.2013.6656534

Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2µm suitable for active-passive integration

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