Size, strain and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 – 1.55 μm emitters

J.M. Ulloa, M. Moral, del, M. Montes, M. Bozkurt, P.M. Koenraad, A. Guzman, A. Hierro

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

1 Citation (Scopus)

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Physics & Astronomy