TY - JOUR
T1 - SiOx structural modifications by ion bombardment and their influence on electrical properties
AU - Milella, A.
AU - Creatore, M.
AU - Sanden, van de, M.C.M.
AU - Tomozeiu, N.
PY - 2006
Y1 - 2006
N2 - The effect of an Ar/O-2 plasma treatment with additional ion bombardment delivered towards silicon suboxides layers has been investigated in terms of induced surface modifications, i.e., morphology, chemistry and electrical properties. Atomic Force Microscopy witnesses the smoothening of the silicon suboxide surface, dependent on the developed bias voltage at the substrate and the treatment time. Spectroscopic ellipsometry points out the optical properties of the modified surface: a thin silicon dioxide layer (5-17 nm) develops as a consequence of the surface process densification, also found to be dependent on the bias voltage and treatment time. Electrical properties (in terms of electric conductivity and layer capacity) are also reported on both the as deposited and ion bombarded samples.
AB - The effect of an Ar/O-2 plasma treatment with additional ion bombardment delivered towards silicon suboxides layers has been investigated in terms of induced surface modifications, i.e., morphology, chemistry and electrical properties. Atomic Force Microscopy witnesses the smoothening of the silicon suboxide surface, dependent on the developed bias voltage at the substrate and the treatment time. Spectroscopic ellipsometry points out the optical properties of the modified surface: a thin silicon dioxide layer (5-17 nm) develops as a consequence of the surface process densification, also found to be dependent on the bias voltage and treatment time. Electrical properties (in terms of electric conductivity and layer capacity) are also reported on both the as deposited and ion bombarded samples.
M3 - Article
VL - 8
SP - 2003
EP - 2010
JO - Journal of Optoelectronics and Advanced Materials
JF - Journal of Optoelectronics and Advanced Materials
SN - 1454-4164
IS - 6
ER -