SiOx structural modifications by ion bombardment and their influence on electrical properties

A. Milella, M. Creatore, M.C.M. Sanden, van de, N. Tomozeiu

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Abstract

The effect of an Ar/O-2 plasma treatment with additional ion bombardment delivered towards silicon suboxides layers has been investigated in terms of induced surface modifications, i.e., morphology, chemistry and electrical properties. Atomic Force Microscopy witnesses the smoothening of the silicon suboxide surface, dependent on the developed bias voltage at the substrate and the treatment time. Spectroscopic ellipsometry points out the optical properties of the modified surface: a thin silicon dioxide layer (5-17 nm) develops as a consequence of the surface process densification, also found to be dependent on the bias voltage and treatment time. Electrical properties (in terms of electric conductivity and layer capacity) are also reported on both the as deposited and ion bombarded samples.
Original languageEnglish
Pages (from-to)2003-2010
JournalJournal of Optoelectronics and Advanced Materials
Volume8
Issue number6
Publication statusPublished - 2006

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