Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In,Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion confined in a columnar dot exhibit sub-Poissonian statistics with an antibunching dip yielding g(2)(0) values of 0.28 and 0.46 at temperature of 10 and 80 K, respectively. Our experimental findings allow considering the GaAs-based columnar quantum dot structure as an efficient single photon source operating at above liquid nitrogen temperatures, which in some characteristics can outperform the existing solutions of any material system.