Abstract
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performing MBE grown structures.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2005 International Conference on Indium Phosphate and Related Materials IEEE, 8-12 May 2005, Glasgow, United Kingdom |
| Place of Publication | Piscataway, NJ, USA |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 64-67 |
| ISBN (Print) | 0780388917 |
| Publication status | Published - 2005 |
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