Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

R.P. Green, L.R. Wilson, D.G. Revin, E.A. Zibik, J.W. Cockburn, P. Offermans, P.M. Koenraad, J.H. Wolter, C. Pflügl, W. Schrenk, G. Strasser, C.M. Tey, A.B. Krysa, J.S. Roberts, A.G. Cullis

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performing MBE grown structures.
Original languageEnglish
Title of host publicationProceedings of the 2005 International Conference on Indium Phosphate and Related Materials IEEE, 8-12 May 2005, Glasgow, United Kingdom
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers
Pages64-67
ISBN (Print)0780388917
Publication statusPublished - 2005

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