We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performing MBE grown structures.
|Title of host publication||Proceedings of the 2005 International Conference on Indium Phosphate and Related Materials IEEE, 8-12 May 2005, Glasgow, United Kingdom|
|Place of Publication||Piscataway, NJ, USA|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2005|