We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.
|Title of host publication||8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.|
|Publication status||Published - 2010|
|Name||Nanoscale Research Letters|
Urbanczyk, A. J., Hamhuis, G. J., & Notzel, R. (2010). Single InGaAs quantum dot coupling to the plasmon resonance of a metal nanocrystal. In 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces. (pp. 1926-1929). (Nanoscale Research Letters; Vol. 5). https://doi.org/10.1007/s11671-010-9785-9