TY - GEN
T1 - Single InGaAs quantum dot coupling to the plasmon resonance of a metal nanocrystal
AU - Urbanczyk, A.J.
AU - Hamhuis, G.J.
AU - Notzel, R.
PY - 2010
Y1 - 2010
N2 - We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.
AB - We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.
U2 - 10.1007/s11671-010-9785-9
DO - 10.1007/s11671-010-9785-9
M3 - Conference contribution
C2 - 21170402
T3 - Nanoscale Research Letters
SP - 1926
EP - 1929
BT - 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
ER -