Single InGaAs quantum dot coupling to the plasmon resonance of a metal nanocrystal

A.J. Urbanczyk, G.J. Hamhuis, R. Notzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionProfessional

7 Citations (Scopus)
18 Downloads (Pure)

Abstract

We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.
Original languageEnglish
Title of host publication8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
Pages1926-1929
DOIs
Publication statusPublished - 2010

Publication series

NameNanoscale Research Letters
Volume5
ISSN (Print)1556-276X

Fingerprint Dive into the research topics of 'Single InGaAs quantum dot coupling to the plasmon resonance of a metal nanocrystal'. Together they form a unique fingerprint.

  • Cite this

    Urbanczyk, A. J., Hamhuis, G. J., & Notzel, R. (2010). Single InGaAs quantum dot coupling to the plasmon resonance of a metal nanocrystal. In 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces. (pp. 1926-1929). (Nanoscale Research Letters; Vol. 5). https://doi.org/10.1007/s11671-010-9785-9