Single-electron tunneling in InP nanowires

S. Franceschi, De; J.A. Dam, Van; E.P.A.M. Bakkers; L.F. Feiner; L. Gurevich; L.P. Kouwenhoven

doi:10.1063/1.1590426

Single-electron tunneling in InP nanowires

S. Franceschi, De, J.A. Dam, Van, E.P.A.M. Bakkers, L.F. Feiner, L. Gurevich, L.P. Kouwenhoven

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

Original language	English
Pages (from-to)	344-346
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.1590426
Publication status	Published - 2003

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@article{31c80c5165704724a1132b9a9cbfb7ee,

title = "Single-electron tunneling in InP nanowires",

abstract = "A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.",

author = "{Franceschi, De}, S. and {Dam, Van}, J.A. and E.P.A.M. Bakkers and L.F. Feiner and L. Gurevich and L.P. Kouwenhoven",

year = "2003",

doi = "10.1063/1.1590426",

language = "English",

volume = "83",

pages = "344--346",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Single-electron tunneling in InP nanowires

AU - Franceschi, De, S.

AU - Dam, Van, J.A.

AU - Bakkers, E.P.A.M.

AU - Feiner, L.F.

AU - Gurevich, L.

AU - Kouwenhoven, L.P.

PY - 2003

Y1 - 2003

N2 - A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

AB - A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

U2 - 10.1063/1.1590426

DO - 10.1063/1.1590426

M3 - Article

SN - 0003-6951

VL - 83

SP - 344

EP - 346

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Single-electron tunneling in InP nanowires

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