Simultaneous two-state lasing in quantum-dot lasers

A. Markus; J.X. Chen; C. Paranthoën; A. Fiore; C. Platz; O. Gauthier-Lafaye

doi:10.1063/1.1563742

Simultaneous two-state lasing in quantum-dot lasers

A. Markus, J.X. Chen, C. Paranthoën, A. Fiore, C. Platz, O. Gauthier-Lafaye

Photonics and Semiconductor Nanophysics

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Abstract

The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, the authors attribute it to incomplete clamping of the ES population at the GS threshold. [on SciFinder (R)]

Original language	English
Pages (from-to)	1818-1820
Journal	Applied Physics Letters
Volume	82
Issue number	12
DOIs	https://doi.org/10.1063/1.1563742
Publication status	Published - 2003

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title = "Simultaneous two-state lasing in quantum-dot lasers",

abstract = "The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, the authors attribute it to incomplete clamping of the ES population at the GS threshold. [on SciFinder (R)]",

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year = "2003",

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T1 - Simultaneous two-state lasing in quantum-dot lasers

AU - Markus, A.

AU - Chen, J.X.

AU - Paranthoën, C.

AU - Fiore, A.

AU - Platz, C.

AU - Gauthier-Lafaye, O.

PY - 2003

Y1 - 2003

N2 - The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, the authors attribute it to incomplete clamping of the ES population at the GS threshold. [on SciFinder (R)]

AB - The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, the authors attribute it to incomplete clamping of the ES population at the GS threshold. [on SciFinder (R)]

U2 - 10.1063/1.1563742

DO - 10.1063/1.1563742

M3 - Article

SN - 0003-6951

VL - 82

SP - 1818

EP - 1820

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Simultaneous two-state lasing in quantum-dot lasers

Abstract

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