Simultaneous two-state lasing in quantum-dot lasers

A. Markus, J.X. Chen, C. Paranthoën, A. Fiore, C. Platz, O. Gauthier-Lafaye

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267 Citations (Scopus)
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Abstract

The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, the authors attribute it to incomplete clamping of the ES population at the GS threshold. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)1818-1820
JournalApplied Physics Letters
Volume82
Issue number12
DOIs
Publication statusPublished - 2003

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