Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation

D. Konstantinou, C. Caillaud, T. Shivan, S. Rommel, U. Johannsen, F. Blache, F. Mallecot, V. Krozer, I. Tafur Monroy

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
84 Downloads (Pure)

Abstract

This work introduces a subsystem level cosimulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent circuit of uni-Traveling carrier photodiodes based on reflection coefficient measurements are analyzed. The optoelectronic lumped equivalent is co-integrated with a transimpedance amplifier design synthesized by high speed transistors. The proposed broadband component achieves competitive performance characteristics exhibiting high gain.

Original languageEnglish
Title of host publication2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublisherInstitute of Electrical and Electronics Engineers
Pages25-26
Number of pages2
ISBN (Electronic)9781728160863
DOIs
Publication statusPublished - 8 Oct 2020
Event20th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020 - Online, Turin, Italy
Duration: 14 Sep 202025 Sep 2020
Conference number: 20
https://www.nusod.org/2020/

Conference

Conference20th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Abbreviated titleNUSOD 2020
Country/TerritoryItaly
CityTurin
Period14/09/2025/09/20
Internet address

Keywords

  • 5G technology
  • TIA
  • UTC-PD
  • mm-waves

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