TY - JOUR
T1 - Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K
AU - Heijden, van der, R.W.
AU - Chen, G.
AU - Waele, de, A.T.A.M.
AU - Gijsman, H.M.
AU - Tielen, F.P.B.
PY - 1991
Y1 - 1991
N2 - The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 % below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.
AB - The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 % below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.
U2 - 10.1016/0038-1098(91)90798-Z
DO - 10.1016/0038-1098(91)90798-Z
M3 - Article
SN - 0038-1098
VL - 78
SP - 5
EP - 8
JO - Solid State Communications
JF - Solid State Communications
IS - 1
ER -