Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K

R.W. Heijden, van der, G. Chen, A.T.A.M. Waele, de, H.M. Gijsman, F.P.B. Tielen

Research output: Contribution to journalArticleAcademicpeer-review

16 Citations (Scopus)

Abstract

The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 % below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.
Original languageEnglish
Pages (from-to)5-8
JournalSolid State Communications
Volume78
Issue number1
DOIs
Publication statusPublished - 1991

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