Abstract
The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| Original language | English |
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| Pages (from-to) | 937-941 |
| Number of pages | 5 |
| Journal | Physica Status Solidi : Rapid Research Letters |
| Volume | 7 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2013 |