Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

B. Hoex; M. Bosman; N. Nandakumar; W.M.M. Kessels

doi:10.1002/pssr.201308081

Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

B. Hoex, M. Bosman, N. Nandakumar, W.M.M. Kessels

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Abstract

The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Original language	English
Pages (from-to)	937-941
Number of pages	5
Journal	Physica Status Solidi : Rapid Research Letters
Volume	7
Issue number	11
DOIs	https://doi.org/10.1002/pssr.201308081
Publication status	Published - 2013

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title = "Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy",

abstract = "The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. ({\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)",

author = "B. Hoex and M. Bosman and N. Nandakumar and W.M.M. Kessels",

year = "2013",

doi = "10.1002/pssr.201308081",

language = "English",

volume = "7",

pages = "937--941",

journal = "Physica Status Solidi : Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

AU - Hoex, B.

AU - Bosman, M.

AU - Nandakumar, N.

AU - Kessels, W.M.M.

PY - 2013

Y1 - 2013

N2 - The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

AB - The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

U2 - 10.1002/pssr.201308081

DO - 10.1002/pssr.201308081

M3 - Article

SN - 1862-6254

VL - 7

SP - 937

EP - 941

JO - Physica Status Solidi : Rapid Research Letters

JF - Physica Status Solidi : Rapid Research Letters

IS - 11

ER -

Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

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