Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography

David Vocht; Luise Armbruster; Alonso Millan-Mejia; Angel Savov; Yuqing Jiao; Erwin Bente

doi:10.1007/978-3-031-63378-2_52

Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography

David Vocht, Luise Armbruster, Alonso Millan-Mejia, Angel Savov, Yuqing Jiao, Erwin Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height to 750 nm, preventing full phase coverage, we demonstrate diffraction-limited focusing in the near-infrared regime. Furthermore, we showcase an achromatic metalens design that successfully reduces chromatic aberration by 40%. These achievements propose a promising alternative for mass-producing metalenses relevant to various applications such as optical sensing.

Original language	English
Title of host publication	The 25th European Conference on Integrated Optics
Subtitle of host publication	Proceedings of ECIO 2024, June 17–19, Aachen, Germany
Editors	Jeremy Witzens, Joyce Poon, Lars Zimmermann, Wolfgang Freude
Place of Publication	Cham
Publisher	Springer
Pages	315-322
Number of pages	8
ISBN (Electronic)	978-3-031-63378-2
ISBN (Print)	978-3-031-63377-5, 978-3-031-63380-5
DOIs	https://doi.org/10.1007/978-3-031-63378-2_52
Publication status	Published - 16 Jun 2024
Event	25th European Conference on Integrated Optics, ECIO 2024 - Aachen, Germany Duration: 17 Jun 2024 → 19 Jun 2024

Publication series

Name	Springer Proceedings in Physics
Volume	402
ISSN (Print)	0930-8989
ISSN (Electronic)	1867-4941

Conference

Conference	25th European Conference on Integrated Optics, ECIO 2024
Country/Territory	Germany
City	Aachen
Period	17/06/24 → 19/06/24

Funding

Funders	Funder number
Nederlandse Organisatie voor Wetenschappelijk Onderzoek	17971

Keywords

DUV lithography
Metalens
metasurface
near-infrared
silicon nitride

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10.1007/978-3-031-63378-2_52

pdfFinal published version, 3.02 MBLicence: TAVERNE

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Vocht, D., Armbruster, L., Millan-Mejia, A., Savov, A., Jiao, Y., & Bente, E. (2024). Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography. In J. Witzens, J. Poon, L. Zimmermann, & W. Freude (Eds.), The 25th European Conference on Integrated Optics: Proceedings of ECIO 2024, June 17–19, Aachen, Germany (pp. 315-322). (Springer Proceedings in Physics; Vol. 402). Springer. https://doi.org/10.1007/978-3-031-63378-2_52

Vocht, David ; Armbruster, Luise ; Millan-Mejia, Alonso et al. / Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography. The 25th European Conference on Integrated Optics: Proceedings of ECIO 2024, June 17–19, Aachen, Germany. editor / Jeremy Witzens ; Joyce Poon ; Lars Zimmermann ; Wolfgang Freude. Cham : Springer, 2024. pp. 315-322 (Springer Proceedings in Physics).

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title = "Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography",

abstract = "We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height to 750 nm, preventing full phase coverage, we demonstrate diffraction-limited focusing in the near-infrared regime. Furthermore, we showcase an achromatic metalens design that successfully reduces chromatic aberration by 40%. These achievements propose a promising alternative for mass-producing metalenses relevant to various applications such as optical sensing.",

keywords = "DUV lithography, Metalens, metasurface, near-infrared, silicon nitride",

author = "David Vocht and Luise Armbruster and Alonso Millan-Mejia and Angel Savov and Yuqing Jiao and Erwin Bente",

year = "2024",

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editor = "Jeremy Witzens and Joyce Poon and Lars Zimmermann and Wolfgang Freude",

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Vocht, D, Armbruster, L, Millan-Mejia, A, Savov, A, Jiao, Y & Bente, E 2024, Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography. in J Witzens, J Poon, L Zimmermann & W Freude (eds), The 25th European Conference on Integrated Optics: Proceedings of ECIO 2024, June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol. 402, Springer, Cham, pp. 315-322, 25th European Conference on Integrated Optics, ECIO 2024, Aachen, Germany, 17/06/24. https://doi.org/10.1007/978-3-031-63378-2_52

Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography. / Vocht, David; Armbruster, Luise; Millan-Mejia, Alonso et al.
The 25th European Conference on Integrated Optics: Proceedings of ECIO 2024, June 17–19, Aachen, Germany. ed. / Jeremy Witzens; Joyce Poon; Lars Zimmermann; Wolfgang Freude. Cham: Springer, 2024. p. 315-322 (Springer Proceedings in Physics; Vol. 402).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Jiao, Yuqing

AU - Bente, Erwin

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N2 - We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height to 750 nm, preventing full phase coverage, we demonstrate diffraction-limited focusing in the near-infrared regime. Furthermore, we showcase an achromatic metalens design that successfully reduces chromatic aberration by 40%. These achievements propose a promising alternative for mass-producing metalenses relevant to various applications such as optical sensing.

AB - We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height to 750 nm, preventing full phase coverage, we demonstrate diffraction-limited focusing in the near-infrared regime. Furthermore, we showcase an achromatic metalens design that successfully reduces chromatic aberration by 40%. These achievements propose a promising alternative for mass-producing metalenses relevant to various applications such as optical sensing.

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Vocht D, Armbruster L, Millan-Mejia A, Savov A, Jiao Y , Bente E. Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography. In Witzens J, Poon J, Zimmermann L, Freude W, editors, The 25th European Conference on Integrated Optics: Proceedings of ECIO 2024, June 17–19, Aachen, Germany. Cham: Springer. 2024. p. 315-322. (Springer Proceedings in Physics). doi: 10.1007/978-3-031-63378-2_52

Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography

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