Silicon etching in hydrogen bromide reactive ion etching plasmas

Research output: Contribution to journal › Article › Academic › peer-review

Original language	English
Pages (from-to)	285-292
Number of pages	8
Journal	Proceedings - Electrochemical Society
Volume	90-14
Publication status	Published - 1990

Cite this

@article{33671a6e6af242e38b3c97ea8b478704,

title = "Silicon etching in hydrogen bromide reactive ion etching plasmas",

author = "T.D. Bestwick and G.S. Oehrlein and G.M.W. Kroesen and F. Cardone and G.J. Scilla",

year = "1990",

language = "English",

volume = "90-14",

pages = "285--292",

journal = "Proceedings - Electrochemical Society",

issn = "0161-6374",

}