Silicon-based true-time-delay phased-array front-ends at ka-band

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Abstract

A high-power and a low-power fully integrated true-time-delay (TTD) phased-array receiver front-end have been developed for Ka-band applications using a 0.25-μm SiGe:C BiCMOS technology. The high-power front-end, consisting of a high-power low-noise amplifier (LNA) and an active TTD phase shifter, achieves 13.8 ±1.3 dB gain and a noise figure (NF) below 3.1 dB at 30 GHz. The front-end provides 17.8-ps continuous variable delay, with 3.5% normalized delay variation (NDV) over a 22-37-GHz frequency span. The low-power front-end, composed of a low-power LNA and a passive TTD phase shifter, achieves 14.8±3dB gain and an NF below 3.2 dB at 30 GHz. The low-power front-end offers 22-ps continuous variable delay with only 5.5% NDV over a 24-40-GHz frequency span. The low-power front-end consumes 22.5-mW power and presents an overall input 1-dB compression point (P1 dB) and input third-order intercept point (IIP3) of-22 and-13.8 dBm, respectively. Depending on the linearity requirements, the high-power front-end can operate in dual-power modes. In the high-power (low-power) mode, the measured worst case input P1 dB and IIP3 are-15.8 (-18 dBm) and-9 dBm (-12 dBm) at 30 GHz with an averaged power consumption per channel of 269 mW (111 mW) for similar TTD and gain performance. The core area of the high-power and low-power front-ends are 0.31 and 0.48 mm}}2, respectively.

Original languageEnglish
Article number7181729
Pages (from-to)2942-2952
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume63
Issue number9
DOIs
Publication statusPublished - 1 Sep 2015

Fingerprint

phased arrays
Time delay
time lag
Silicon
Low noise amplifiers
Phase shifters
Noise figure
silicon
Power amplifiers
BiCMOS technology
low noise
Electric power utilization
amplifiers
linearity
receivers
requirements

Keywords

  • Ka-band
  • low-noise amplifier (LNA)
  • phase shifter
  • phased array
  • phased array front-end
  • SiGe BiCMOS integrated circuit (IC)
  • true time delay (TTD)

Cite this

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title = "Silicon-based true-time-delay phased-array front-ends at ka-band",
abstract = "A high-power and a low-power fully integrated true-time-delay (TTD) phased-array receiver front-end have been developed for Ka-band applications using a 0.25-μm SiGe:C BiCMOS technology. The high-power front-end, consisting of a high-power low-noise amplifier (LNA) and an active TTD phase shifter, achieves 13.8 ±1.3 dB gain and a noise figure (NF) below 3.1 dB at 30 GHz. The front-end provides 17.8-ps continuous variable delay, with 3.5{\%} normalized delay variation (NDV) over a 22-37-GHz frequency span. The low-power front-end, composed of a low-power LNA and a passive TTD phase shifter, achieves 14.8±3dB gain and an NF below 3.2 dB at 30 GHz. The low-power front-end offers 22-ps continuous variable delay with only 5.5{\%} NDV over a 24-40-GHz frequency span. The low-power front-end consumes 22.5-mW power and presents an overall input 1-dB compression point (P1 dB) and input third-order intercept point (IIP3) of-22 and-13.8 dBm, respectively. Depending on the linearity requirements, the high-power front-end can operate in dual-power modes. In the high-power (low-power) mode, the measured worst case input P1 dB and IIP3 are-15.8 (-18 dBm) and-9 dBm (-12 dBm) at 30 GHz with an averaged power consumption per channel of 269 mW (111 mW) for similar TTD and gain performance. The core area of the high-power and low-power front-ends are 0.31 and 0.48 mm}}2, respectively.",
keywords = "Ka-band, low-noise amplifier (LNA), phase shifter, phased array, phased array front-end, SiGe BiCMOS integrated circuit (IC), true time delay (TTD)",
author = "Q. Ma and D.M.W. Leenaerts and P.G.M. Baltus",
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Silicon-based true-time-delay phased-array front-ends at ka-band. / Ma, Q.; Leenaerts, D.M.W.; Baltus, P.G.M.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 63, No. 9, 7181729, 01.09.2015, p. 2942-2952.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

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AU - Ma, Q.

AU - Leenaerts, D.M.W.

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N2 - A high-power and a low-power fully integrated true-time-delay (TTD) phased-array receiver front-end have been developed for Ka-band applications using a 0.25-μm SiGe:C BiCMOS technology. The high-power front-end, consisting of a high-power low-noise amplifier (LNA) and an active TTD phase shifter, achieves 13.8 ±1.3 dB gain and a noise figure (NF) below 3.1 dB at 30 GHz. The front-end provides 17.8-ps continuous variable delay, with 3.5% normalized delay variation (NDV) over a 22-37-GHz frequency span. The low-power front-end, composed of a low-power LNA and a passive TTD phase shifter, achieves 14.8±3dB gain and an NF below 3.2 dB at 30 GHz. The low-power front-end offers 22-ps continuous variable delay with only 5.5% NDV over a 24-40-GHz frequency span. The low-power front-end consumes 22.5-mW power and presents an overall input 1-dB compression point (P1 dB) and input third-order intercept point (IIP3) of-22 and-13.8 dBm, respectively. Depending on the linearity requirements, the high-power front-end can operate in dual-power modes. In the high-power (low-power) mode, the measured worst case input P1 dB and IIP3 are-15.8 (-18 dBm) and-9 dBm (-12 dBm) at 30 GHz with an averaged power consumption per channel of 269 mW (111 mW) for similar TTD and gain performance. The core area of the high-power and low-power front-ends are 0.31 and 0.48 mm}}2, respectively.

AB - A high-power and a low-power fully integrated true-time-delay (TTD) phased-array receiver front-end have been developed for Ka-band applications using a 0.25-μm SiGe:C BiCMOS technology. The high-power front-end, consisting of a high-power low-noise amplifier (LNA) and an active TTD phase shifter, achieves 13.8 ±1.3 dB gain and a noise figure (NF) below 3.1 dB at 30 GHz. The front-end provides 17.8-ps continuous variable delay, with 3.5% normalized delay variation (NDV) over a 22-37-GHz frequency span. The low-power front-end, composed of a low-power LNA and a passive TTD phase shifter, achieves 14.8±3dB gain and an NF below 3.2 dB at 30 GHz. The low-power front-end offers 22-ps continuous variable delay with only 5.5% NDV over a 24-40-GHz frequency span. The low-power front-end consumes 22.5-mW power and presents an overall input 1-dB compression point (P1 dB) and input third-order intercept point (IIP3) of-22 and-13.8 dBm, respectively. Depending on the linearity requirements, the high-power front-end can operate in dual-power modes. In the high-power (low-power) mode, the measured worst case input P1 dB and IIP3 are-15.8 (-18 dBm) and-9 dBm (-12 dBm) at 30 GHz with an averaged power consumption per channel of 269 mW (111 mW) for similar TTD and gain performance. The core area of the high-power and low-power front-ends are 0.31 and 0.48 mm}}2, respectively.

KW - Ka-band

KW - low-noise amplifier (LNA)

KW - phase shifter

KW - phased array

KW - phased array front-end

KW - SiGe BiCMOS integrated circuit (IC)

KW - true time delay (TTD)

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DO - 10.1109/TMTT.2015.2458326

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JF - IEEE Transactions on Microwave Theory and Techniques

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