Silicon-based sub-THz PA for wireless communication

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This paper presents a D-band power amplifier design consideration and its extension on a D-band transmitter. In a sub-THz transmitter, its output power and efficiency are determined by the power amplifier. In this work, the design consideration of a 150 GHz power amplifier with 7.1 P sat is presented with a 0.13 μm SiGe technology. In a direction-conversion architecture-based transmitter, a mixer is important for RF-to-LO isolation. A detailed topology analysis is also provided in this paper. A 150 GHz transmitter with an on-chip antenna in 0.13 μm SiGe technology is presented with its 10 cm wireless measured data is presented in this paper.
Original languageEnglish
Title of host publication2021 International Conference on IC Design and Technology, ICICDT 2021
PublisherInstitute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)978-1-6654-4998-4
Publication statusPublished - 2 Dec 2021
Event2021 International Conference on IC Design and Technology (ICICDT) - Dresden, Germany
Duration: 15 Sep 202117 Sep 2021


Conference2021 International Conference on IC Design and Technology (ICICDT)


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