In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate (+Vg) and gate-injection (-Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.
|Number of pages||4|
|Publication status||Published - Sep 1999|
|Event||1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger|
Duration: 16 Jun 1999 → 19 Jun 1999