SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

V. E. Houtsma, J. Holleman, C. Salm, P. H. Woerlee

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate (+Vg) and gate-injection (-Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalMicroelectronic Engineering
Volume48
Issue number1
DOIs
Publication statusPublished - Sep 1999
Externally publishedYes
Event1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger
Duration: 16 Jun 199919 Jun 1999

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