SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

V. E. Houtsma; J. Holleman; C. Salm; P. H. Woerlee

doi:10.1016/S0167-9317(99)00416-5

SILC in MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material

V. E. Houtsma, J. Holleman, C. Salm, P. H. Woerlee

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

In this paper the DC-SILC characteristics of n⁺ and p⁺ poly-Si and poly-SiGe MOS capacitors are studied for substrate (+V_g) and gate-injection (-V_g) conditions. P⁺ and n⁺-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-_0.7Ge_0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n⁺ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n⁺ poly-Si gate devices is observed. For p⁺ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	Microelectronic Engineering
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00416-5
Publication status	Published - Sep 1999
Externally published	Yes
Event	1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger Duration: 16 Jun 1999 → 19 Jun 1999

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10.1016/S0167-9317(99)00416-5

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title = "SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material",

abstract = "In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate (+Vg) and gate-injection (-Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.",

author = "Houtsma, {V. E.} and J. Holleman and C. Salm and Woerlee, {P. H.}",

year = "1999",

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TY - JOUR

T1 - SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

AU - Houtsma, V. E.

AU - Holleman, J.

AU - Salm, C.

AU - Woerlee, P. H.

PY - 1999/9

Y1 - 1999/9

N2 - In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate (+Vg) and gate-injection (-Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

AB - In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate (+Vg) and gate-injection (-Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

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U2 - 10.1016/S0167-9317(99)00416-5

DO - 10.1016/S0167-9317(99)00416-5

M3 - Conference article

AN - SCOPUS:0033190196

VL - 48

SP - 415

EP - 418

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1

T2 - 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99)

Y2 - 16 June 1999 through 19 June 1999

ER -

SILC in MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material

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