SiHx radical densities in a remote SiH4 plasma for high rate deposition of a-Si-H

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	AVS, American Vacuum Society : 47th international symposium, Boston, October 2-6, 2000 : virtual proceedings
Publication status	Published - 2000

Cite this

@inproceedings{c70680f6c8284c3a82265ecef5c12c26,

title = "SiHx radical densities in a remote SiH4 plasma for high rate deposition of a-Si-H",

author = "W.M.M. Kessels and J.P.M. Hoefnagels and M.G.H. Boogaarts and D.C. Schram and {Sanden, van de}, M.C.M.",

year = "2000",

language = "English",

booktitle = "AVS, American Vacuum Society : 47th international symposium, Boston, October 2-6, 2000 : virtual proceedings",

}

TY - GEN

T1 - SiHx radical densities in a remote SiH4 plasma for high rate deposition of a-Si-H

AU - Kessels, W.M.M.

AU - Hoefnagels, J.P.M.

AU - Boogaarts, M.G.H.

AU - Schram, D.C.

AU - Sanden, van de, M.C.M.

PY - 2000

Y1 - 2000

M3 - Conference contribution

BT - AVS, American Vacuum Society : 47th international symposium, Boston, October 2-6, 2000 : virtual proceedings

ER -