Side-wall morphology in reactive ion etching of GaN

F. Karouta, B. Jacobs, K. Jacobs, I. Moerman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proc. 4th Annual Sympsoium of the IEEE/LEOS Benelux Chapter
Pages	215-217
Publication status	Published - 1999
Event	4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999 - Mons, Belgium Duration: 15 Nov 1999 → 15 Nov 1999

Conference	4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999
Country/Territory	Belgium
City	Mons
Period	15/11/99 → 15/11/99

Cite this

@inproceedings{8a44a01e13a741e0a1dc7e00fe2a102a,

title = "Side-wall morphology in reactive ion etching of GaN",

author = "F. Karouta and B. Jacobs and K. Jacobs and I. Moerman",

year = "1999",

language = "English",

isbn = "2-9600226-0-2",

pages = "215--217",

booktitle = "Proc. 4th Annual Sympsoium of the IEEE/LEOS Benelux Chapter",

note = "4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999 ; Conference date: 15-11-1999 Through 15-11-1999",

}

TY - GEN

T1 - Side-wall morphology in reactive ion etching of GaN

AU - Karouta, F.

AU - Jacobs, B.

AU - Jacobs, K.

AU - Moerman, I.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SN - 2-9600226-0-2

SP - 215

EP - 217

BT - Proc. 4th Annual Sympsoium of the IEEE/LEOS Benelux Chapter

T2 - 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999

Y2 - 15 November 1999 through 15 November 1999

ER -