Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications

Wouter Koek; Bastiaan Florijn; Stefan Bäumer; Rik Kruidhof; Hamed Sadeghian

doi:10.1117/12.2306488

Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications

Wouter Koek
, Bastiaan Florijn
, Stefan Bäumer
, Rik Kruidhof
, Hamed Sadeghian

Dynamics and Control

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm², and a full three-dimensional measurement takes roughly 6 hours per μm². Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm² is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.

Original language	English
Title of host publication	Metrology, Inspection, and Process Control for Microlithography XXXII
Place of Publication	San Jose, California
Publisher	SPIE
Number of pages	8
ISBN (Electronic)	9781510616622
DOIs	https://doi.org/10.1117/12.2306488
Publication status	Published - 1 Jan 2018
Event	Metrology, Inspection, and Process Control for Microlithography XXXII - San Jose, United States Duration: 26 Feb 2018 → 1 Mar 2018

Publication series

Name	Proceedings of SPIE
Volume	10585

Conference

Conference	Metrology, Inspection, and Process Control for Microlithography XXXII
Country/Territory	United States
City	San Jose
Period	26/02/18 → 1/03/18

Funding

This research was supported by the Netherlands Organization for Applied Program 3D Nanomanufacturing Instruments.

Keywords

EUV
lensless imaging
nanometrology
Ptychography
shot noise
soft X-ray
throughput
ptychography
soft x-ray

Access to Document

10.1117/12.2306488

Cite this

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title = "Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications",

abstract = "Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2, and a full three-dimensional measurement takes roughly 6 hours per μm2. Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.",

keywords = "EUV, lensless imaging, nanometrology, Ptychography, shot noise, soft X-ray, throughput, ptychography, soft x-ray",

author = "Wouter Koek and Bastiaan Florijn and Stefan B{\"a}umer and Rik Kruidhof and Hamed Sadeghian",

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booktitle = "Metrology, Inspection, and Process Control for Microlithography XXXII",

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Koek, W, Florijn, B, Bäumer, S, Kruidhof, R & Sadeghian, H 2018, Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications. in Metrology, Inspection, and Process Control for Microlithography XXXII., 1058533, Proceedings of SPIE, vol. 10585, SPIE, San Jose, California, Metrology, Inspection, and Process Control for Microlithography XXXII, San Jose, United States, 26/02/18. https://doi.org/10.1117/12.2306488

Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications. / Koek, Wouter; Florijn, Bastiaan; Bäumer, Stefan et al.
Metrology, Inspection, and Process Control for Microlithography XXXII. San Jose, California: SPIE, 2018. 1058533 (Proceedings of SPIE; Vol. 10585).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications

AU - Koek, Wouter

AU - Florijn, Bastiaan

AU - Bäumer, Stefan

AU - Kruidhof, Rik

AU - Sadeghian, Hamed

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2, and a full three-dimensional measurement takes roughly 6 hours per μm2. Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.

AB - Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2, and a full three-dimensional measurement takes roughly 6 hours per μm2. Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.

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KW - lensless imaging

KW - nanometrology

KW - Ptychography

KW - shot noise

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KW - throughput

KW - ptychography

KW - soft x-ray

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M3 - Conference contribution

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PB - SPIE

CY - San Jose, California

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Y2 - 26 February 2018 through 1 March 2018

ER -

Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications

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Keywords

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