Short-channel vertical organic field-effect transistors with high on/off ratios

Tamer Dogan, Roy Verbeek, Auke J. Kronemeijer, Peter A. Bobbert, Gerwin H. Gelinck, Wilfred G. van der Wiel (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm −2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required.

Original languageEnglish
Article number1900041
JournalAdvanced Electronic Materials
Volume5
Issue number5
DOIs
Publication statusPublished - 1 May 2019

Fingerprint

Organic field effect transistors
Current density
Semiconducting polymers
Silicon
Electric space charge
Transistors
Electrodes
Computer simulation

Keywords

  • organic electronics
  • polymer semiconductors
  • short-channel effects
  • vertical organic field-effect transistors

Cite this

Dogan, Tamer ; Verbeek, Roy ; Kronemeijer, Auke J. ; Bobbert, Peter A. ; Gelinck, Gerwin H. ; van der Wiel, Wilfred G. / Short-channel vertical organic field-effect transistors with high on/off ratios. In: Advanced Electronic Materials. 2019 ; Vol. 5, No. 5.
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Short-channel vertical organic field-effect transistors with high on/off ratios. / Dogan, Tamer; Verbeek, Roy; Kronemeijer, Auke J.; Bobbert, Peter A.; Gelinck, Gerwin H.; van der Wiel, Wilfred G. (Corresponding author).

In: Advanced Electronic Materials, Vol. 5, No. 5, 1900041, 01.05.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Short-channel vertical organic field-effect transistors with high on/off ratios

AU - Dogan, Tamer

AU - Verbeek, Roy

AU - Kronemeijer, Auke J.

AU - Bobbert, Peter A.

AU - Gelinck, Gerwin H.

AU - van der Wiel, Wilfred G.

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AB - A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm −2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required.

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