Shape transition of coherent three-dimensional (In, Ga)As islands on GaAs(100)

Wenquan Ma; R. Nötzel; H.-P. Schönherr; K. Ploog

doi:10.1063/1.1428107

Shape transition of coherent three-dimensional (In, Ga)As islands on GaAs(100)

Wenquan Ma, R. Nötzel, H.-P. Schönherr, K. Ploog

Photonics and Semiconductor Nanophysics

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Abstract

The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. ©2001 American Institute of Physics.

Original language	English
Pages (from-to)	4219-4221
Journal	Applied Physics Letters
Volume	79
Issue number	25
DOIs	https://doi.org/10.1063/1.1428107
Publication status	Published - 2001

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title = "Shape transition of coherent three-dimensional (In, Ga)As islands on GaAs(100)",

abstract = "The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. {\textcopyright}2001 American Institute of Physics.",

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year = "2001",

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journal = "Applied Physics Letters",

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T1 - Shape transition of coherent three-dimensional (In, Ga)As islands on GaAs(100)

AU - Ma, Wenquan

AU - Nötzel, R.

AU - Schönherr, H.-P.

AU - Ploog, K.

PY - 2001

Y1 - 2001

N2 - The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. ©2001 American Institute of Physics.

AB - The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. ©2001 American Institute of Physics.

U2 - 10.1063/1.1428107

DO - 10.1063/1.1428107

M3 - Article

SN - 0003-6951

VL - 79

SP - 4219

EP - 4221

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Shape transition of coherent three-dimensional (In, Ga)As islands on GaAs(100)

Abstract

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