Shape transition of coherent three-dimensional (In, Ga)As islands on GaAs(100)

Wenquan Ma, R. Nötzel, H.-P. Schönherr, K. Ploog

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Abstract

The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. ©2001 American Institute of Physics.
Original languageEnglish
Pages (from-to)4219-4221
JournalApplied Physics Letters
Volume79
Issue number25
DOIs
Publication statusPublished - 2001

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