We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The
analysis of the height versus base length relation obtained from cross-sectional images of the dots show that the shape of the dots resembles that of a truncated pyramid with a square base that is oriented along the  and  directions. Our results about
the shape and size agree with the analysis of previous photocurrent measurements on these samples.
|Springer Proceedings in Physics
|25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan
|17/09/00 → 22/09/00
|25th Int. Conf. on the Physics of Semiconductors