Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

D.M. Bruls, J.W.A.M. Vugs, P.M. Koenraad, M.S. Skolnick, M. Hopkinson, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained from cross-sectional images of the dots show that the shape of the dots resembles that of a truncated pyramid with a square base that is oriented along the [100] and [010] directions. Our results about the shape and size agree with the analysis of previous photocurrent measurements on these samples.
Original languageEnglish
Title of host publication25th Int. Conf. on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan
EditorsN. Miura, T. Ando
Pages359-360
Publication statusPublished - 2001
Event25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan - Osaka, Japan
Duration: 17 Sep 200022 Sep 2000

Publication series

NameSpringer Proceedings in Physics
ISSN (Print)0930-8989

Conference

Conference25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan
Country/TerritoryJapan
CityOsaka
Period17/09/0022/09/00
Other25th Int. Conf. on the Physics of Semiconductors

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