Semiconductor plasmonic crystals : active control of THz extinction

M.C. Schaafsma, J. Gomez Rivas

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
108 Downloads (Pure)

Abstract

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers.
Original languageEnglish
Article number124003
Pages (from-to)124003-1/7
Number of pages8
JournalSemiconductor Science and Technology
Volume28
Issue number12
DOIs
Publication statusPublished - 2013

Fingerprint Dive into the research topics of 'Semiconductor plasmonic crystals : active control of THz extinction'. Together they form a unique fingerprint.

Cite this