Semiconductor device comprising a pn-heterojunction

G.A.M. Hurkx (Inventor), P. Agarwal (Inventor), A.R. Balkenende (Inventor), P.H.C. Magnee (Inventor), M.M.H. Wagemans (Inventor), E.P.A.M. Bakkers (Inventor), E.A. Hijzen (Inventor)

Research output: PatentPatent publication


An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).
Original languageEnglish
Patent numberUS20070120254
Publication statusPublished - 31 May 2007


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