Semiconductor device comprising a pn-heterojunction

G.A.M. Hurkx; P. Agarwal; A.R. Balkenende; P.H.C. Magnee; M.M.H. Wagemans; E.P.A.M. Bakkers; E.A. Hijzen

Semiconductor device comprising a pn-heterojunction

G.A.M. Hurkx (Inventor), P. Agarwal (Inventor), A.R. Balkenende (Inventor), P.H.C. Magnee (Inventor), M.M.H. Wagemans (Inventor), E.P.A.M. Bakkers (Inventor), E.A. Hijzen (Inventor)

Photonics and Semiconductor Nanophysics

Research output: Patent › Patent publication

Abstract

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).

Original language	English
Patent number	US20070120254
Publication status	Published - 31 May 2007

Cite this

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title = "Semiconductor device comprising a pn-heterojunction",

abstract = "An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).",

author = "G.A.M. Hurkx and P. Agarwal and A.R. Balkenende and P.H.C. Magnee and M.M.H. Wagemans and E.P.A.M. Bakkers and E.A. Hijzen",

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TY - PAT

T1 - Semiconductor device comprising a pn-heterojunction

AU - Hurkx, G.A.M.

AU - Agarwal, P.

AU - Balkenende, A.R.

AU - Magnee, P.H.C.

AU - Wagemans, M.M.H.

AU - Bakkers, E.P.A.M.

AU - Hijzen, E.A.

PY - 2007/5/31

Y1 - 2007/5/31

N2 - An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).

AB - An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor body ( 1 ) and has a first conductivity type, the semiconductor body ( 1 ) has a second conductivity type opposite to the first conductivity type, the nanowire ( 3 ) forming with the semiconductor body ( 1 ) a pn-heterojunction ( 4 ). The nanowire of III-V semiconductor material can be used as a diffusion source ( 5 ) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region ( 6 ) in the semiconductor body in direct contact with the nanowire ( 3 ).

UR - http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&adjacent=true&locale=en_gb&FT=D&date=20070531&CC=US&NR=2007120254A1&KC=A1

M3 - Patent publication

M1 - US20070120254

ER -

Semiconductor device comprising a pn-heterojunction

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