Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.
|Title of host publication||Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A|
|Editors||J.S. Speck, D.K. Fork, R.M. Wolf, xx et al.|
|Place of Publication||Pittsburgh|
|Publisher||Materials Research Society|
|Publication status||Published - 1996|
|Name||Materials Research Society Symposium Proceedings|
Grosse-Holz, K-O., Cillessen, J. F. M., Prins, M. W. J., Blom, P. W. M., Wolf, R. M., Feiner, L. F., & Waser, R. (1996). Semiconductive behavior of Sb doped SnO2 thin films. In J. S. Speck, D. K. Fork, R. M. Wolf, & X. et al. (Eds.), Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A (pp. 67-72). (Materials Research Society Symposium Proceedings; Vol. 401). Materials Research Society.