Semiconductive behavior of Sb doped SnO2 thin films

K.-O. Grosse-Holz, J.F.M. Cillessen, M.W.J. Prins, P.W.M. Blom, R.M. Wolf, L.F. Feiner, R. Waser

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Abstract

Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.
Original languageEnglish
Title of host publicationEpitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A
EditorsJ.S. Speck, D.K. Fork, R.M. Wolf, xx et al.
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages67-72
ISBN (Print)1-55899-304-5
Publication statusPublished - 1996

Publication series

NameMaterials Research Society Symposium Proceedings
Volume401
ISSN (Print)0272-9172

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    Grosse-Holz, K-O., Cillessen, J. F. M., Prins, M. W. J., Blom, P. W. M., Wolf, R. M., Feiner, L. F., & Waser, R. (1996). Semiconductive behavior of Sb doped SnO2 thin films. In J. S. Speck, D. K. Fork, R. M. Wolf, & X. et al. (Eds.), Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A (pp. 67-72). (Materials Research Society Symposium Proceedings; Vol. 401). Materials Research Society.