Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed.
Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.
|Title of host publication||Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A|
|Editors||J.S. Speck, D.K. Fork, R.M. Wolf, xx et al.|
|Place of Publication||Pittsburgh|
|Publisher||Materials Research Society|
|Publication status||Published - 1996|
|Name||Materials Research Society Symposium Proceedings|