Semiconducting devices and method of making thereof

H. Meiling (Inventor), R.E.I. Schropp (Inventor)

Research output: PatentPatent publication

Abstract

The invention relates to a process for providing a semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.

Original languageEnglish
Patent numberUS2002132411
IPCH01L 31/ 04 A I
Priority date18/12/97
Publication statusPublished - 19 Sep 2002
Externally publishedYes

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