Semiconducting devices and method of making thereof

H. Meiling; R.E.I. Schropp

Semiconducting devices and method of making thereof

H. Meiling (Inventor), R.E.I. Schropp (Inventor)

Research output: Patent › Patent publication

Abstract

The invention relates to a process for providing a semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.

Original language	English
Patent number	US2002132411
IPC	H01L 31/ 04 A I
Priority date	18/12/97
Publication status	Published - 19 Sept 2002
Externally published	Yes

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title = "Semiconducting devices and method of making thereof",

abstract = "The invention relates to a process for providing a semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.",

author = "H. Meiling and R.E.I. Schropp",

year = "2002",

month = sep,

day = "19",

language = "English",

type = "Patent",

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T1 - Semiconducting devices and method of making thereof

AU - Meiling, H.

AU - Schropp, R.E.I.

PY - 2002/9/19

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N2 - The invention relates to a process for providing a semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.

AB - The invention relates to a process for providing a semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.

M3 - Patent publication

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ER -

Semiconducting devices and method of making thereof

Abstract

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